Ferroelectric switching control of spin current in graphene proximitized by In$_2$Se$_3$
Fuente:
arXiv
Gespeichert in:
| Hauptverfasser: | , , , , |
|---|---|
| Format: | Preprint |
| Veröffentlicht: |
2025
|
| Schlagworte: | |
| Online-Zugang: | |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| _version_ | 1866917287168049152 |
|---|---|
| author | Milivojević, Marko Mnich, Juraj Jureczko, Paulina Kurpas, Marcin Gmitra, Martin |
| author_facet | Milivojević, Marko Mnich, Juraj Jureczko, Paulina Kurpas, Marcin Gmitra, Martin |
| contents | By utilizing the proximity effect, we introduce a platform that exploits ferroelectric switching to modulate spin currents in graphene proximitized by ferroelectric In$_2$Se$_3$ monolayer. Through first-principles calculations and tight-binding modeling, we studied the electronic structure of graphene/In$_2$Se$_3$ heterostructure for twist angles of 0$^{\circ}$ and 17.5$^{\circ}$, considering both ferroelectric polarizations. We discover that switching the ferroelectric polarization reverses the sign of the charge-to-spin conversion coefficients, acting as a chirality switch of the in-plane spin texture in graphene. For the twisted heterostructure, we observed emergence of unconventional radial Rashba field for one ferroelectric polarization direction. Additionally, we demonstrated that the Rashba phase can be directly extracted from the ratio of conversion efficiency coefficients, providing a straightforward approach to characterize the in-plane spin texture in graphene. All the unique features of the studied graphene/In$_2$Se$_3$ heterostructure can be experimentally detected, offering a promising approach for developing advanced spintronic devices with enhanced performance and efficiency. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2506_15269 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Ferroelectric switching control of spin current in graphene proximitized by In$_2$Se$_3$ Milivojević, Marko Mnich, Juraj Jureczko, Paulina Kurpas, Marcin Gmitra, Martin Materials Science Mesoscale and Nanoscale Physics By utilizing the proximity effect, we introduce a platform that exploits ferroelectric switching to modulate spin currents in graphene proximitized by ferroelectric In$_2$Se$_3$ monolayer. Through first-principles calculations and tight-binding modeling, we studied the electronic structure of graphene/In$_2$Se$_3$ heterostructure for twist angles of 0$^{\circ}$ and 17.5$^{\circ}$, considering both ferroelectric polarizations. We discover that switching the ferroelectric polarization reverses the sign of the charge-to-spin conversion coefficients, acting as a chirality switch of the in-plane spin texture in graphene. For the twisted heterostructure, we observed emergence of unconventional radial Rashba field for one ferroelectric polarization direction. Additionally, we demonstrated that the Rashba phase can be directly extracted from the ratio of conversion efficiency coefficients, providing a straightforward approach to characterize the in-plane spin texture in graphene. All the unique features of the studied graphene/In$_2$Se$_3$ heterostructure can be experimentally detected, offering a promising approach for developing advanced spintronic devices with enhanced performance and efficiency. |
| title | Ferroelectric switching control of spin current in graphene proximitized by In$_2$Se$_3$ |
| topic | Materials Science Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2506.15269 |