Pseudo anomalous Hall effect in semiconductors and semimetals: A classical perspective
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arXiv
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| Format: | Preprint |
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2025
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| _version_ | 1866918126979907584 |
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| author | Yamada, Akiyoshi Fuseya, Yuki |
| author_facet | Yamada, Akiyoshi Fuseya, Yuki |
| contents | We demonstrate that the non-linear field dependence in the Hall effect, often indistinguishable from the anomalous Hall effect, can be realized entirely within the classical mechanism due to the Lorentz force by analyzing multi-valley models for semiconductors and semimetals. The non-linear component in the Hall resistivity $ρ_H^{\rm NL}$ originates from carrier mobility anisotropy or the coexistence of different charges. Since $ρ_H^{\rm NL}$ is inversely proportional to the carrier difference between electrons and holes $Δn$, it exceeds its zero-field value near charge neutrality. As a practical example, we show that the magnitude of the classical non-linear Hall response in ZrTe$_5$ is comparable to the experimental values, underscoring the importance of accounting for classical contributions before attributing non-linear Hall effects to quantum mechanisms. |
| format | Preprint |
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arxiv_https___arxiv_org_abs_2506_16137 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Pseudo anomalous Hall effect in semiconductors and semimetals: A classical perspective Yamada, Akiyoshi Fuseya, Yuki Mesoscale and Nanoscale Physics Materials Science We demonstrate that the non-linear field dependence in the Hall effect, often indistinguishable from the anomalous Hall effect, can be realized entirely within the classical mechanism due to the Lorentz force by analyzing multi-valley models for semiconductors and semimetals. The non-linear component in the Hall resistivity $ρ_H^{\rm NL}$ originates from carrier mobility anisotropy or the coexistence of different charges. Since $ρ_H^{\rm NL}$ is inversely proportional to the carrier difference between electrons and holes $Δn$, it exceeds its zero-field value near charge neutrality. As a practical example, we show that the magnitude of the classical non-linear Hall response in ZrTe$_5$ is comparable to the experimental values, underscoring the importance of accounting for classical contributions before attributing non-linear Hall effects to quantum mechanisms. |
| title | Pseudo anomalous Hall effect in semiconductors and semimetals: A classical perspective |
| topic | Mesoscale and Nanoscale Physics Materials Science |
| url | https://arxiv.org/abs/2506.16137 |