Bi2Te3-Sb2Te3-Bi2Te3 Lateral Heterostructures Grown by Molecular Beam Epitaxy
Fuente:
arXiv
Saved in:
| Main Authors: | , , , , , , |
|---|---|
| Format: | Preprint |
| Published: |
2025
|
| Subjects: | |
| Online Access: | |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1866918064308617216 |
|---|---|
| author | Guha, Puspendu Lee, Sangmin Lee, Eunsu Bae, Hyeonhu Lee, Hoonkyung Kim, Miyoung Yi, Gyu-Chul |
| author_facet | Guha, Puspendu Lee, Sangmin Lee, Eunsu Bae, Hyeonhu Lee, Hoonkyung Kim, Miyoung Yi, Gyu-Chul |
| contents | Lateral in-plane heterostructures enable precise control of electronic properties and quantum effects in 2D materials. However, their periodic synthesis is challenging because it requires precise control to maintain sharp, coherent interfaces and compatible growth conditions across different domains. Herein, we report the successful heteroepitaxial growth of Bi2Te3-Sb2Te3-Bi2Te3 and periodic lateral heterostructures on hexagonal boron nitride (hBN) through in-situ multiple growth steps at different stages using a molecular beam epitaxy (MBE) system. These trilateral heterostructures are fabricated by growing triangular or hexagonal Bi2Te3 islands at the very beginning, with typical sizes of several hundred nanometers, on the single-crystalline hBN, followed by the lateral growth of Sb2Te3 to form bilateral heterostructures, and finally growing Bi2Te3 on the side facets of the bilateral heterostructures. The electron microscopy results confirm the core area as Bi2Te3, the intermediate layer as Sb2Te3, and the outermost region as Bi2Te3. The resulting heterostructures are approximately 4-8 nm thick and several hundred nanometers in lateral dimensions. These heterostructures are found to grow epitaxially on hBN (< +-4 deg misalignment), and the individual layers are strongly epitaxially aligned with each other. The in-plane heterojunctions are analyzed using the aberration-corrected (Cs-corrected) high-angle annular dark-field scanning transmission electron microscopy technique. We have explored and established the plasmonic properties of these fabricated Bi2Te3-Sb2Te3-Bi2Te3 lateral heterostructures. In addition, the electronic states and the topological properties of the few quintuple layers (QLs) (2- to 4-QLs) Bi2Te3-Sb2Te3 lateral periodic heterostructures are investigated by first-principles calculations. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2506_16149 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Bi2Te3-Sb2Te3-Bi2Te3 Lateral Heterostructures Grown by Molecular Beam Epitaxy Guha, Puspendu Lee, Sangmin Lee, Eunsu Bae, Hyeonhu Lee, Hoonkyung Kim, Miyoung Yi, Gyu-Chul Materials Science Mesoscale and Nanoscale Physics Lateral in-plane heterostructures enable precise control of electronic properties and quantum effects in 2D materials. However, their periodic synthesis is challenging because it requires precise control to maintain sharp, coherent interfaces and compatible growth conditions across different domains. Herein, we report the successful heteroepitaxial growth of Bi2Te3-Sb2Te3-Bi2Te3 and periodic lateral heterostructures on hexagonal boron nitride (hBN) through in-situ multiple growth steps at different stages using a molecular beam epitaxy (MBE) system. These trilateral heterostructures are fabricated by growing triangular or hexagonal Bi2Te3 islands at the very beginning, with typical sizes of several hundred nanometers, on the single-crystalline hBN, followed by the lateral growth of Sb2Te3 to form bilateral heterostructures, and finally growing Bi2Te3 on the side facets of the bilateral heterostructures. The electron microscopy results confirm the core area as Bi2Te3, the intermediate layer as Sb2Te3, and the outermost region as Bi2Te3. The resulting heterostructures are approximately 4-8 nm thick and several hundred nanometers in lateral dimensions. These heterostructures are found to grow epitaxially on hBN (< +-4 deg misalignment), and the individual layers are strongly epitaxially aligned with each other. The in-plane heterojunctions are analyzed using the aberration-corrected (Cs-corrected) high-angle annular dark-field scanning transmission electron microscopy technique. We have explored and established the plasmonic properties of these fabricated Bi2Te3-Sb2Te3-Bi2Te3 lateral heterostructures. In addition, the electronic states and the topological properties of the few quintuple layers (QLs) (2- to 4-QLs) Bi2Te3-Sb2Te3 lateral periodic heterostructures are investigated by first-principles calculations. |
| title | Bi2Te3-Sb2Te3-Bi2Te3 Lateral Heterostructures Grown by Molecular Beam Epitaxy |
| topic | Materials Science Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2506.16149 |