Negative capacitance overcomes Schottky-gate limits in GaN high-electron-mobility transistors

Fuente: arXiv

Saved in:

Bibliographic Details
Main Authors:	Khan, Asir Intisar, Kim, Jeong-Kyu, Sikder, Urmita, Das, Koushik, Rodriguez, Thomas, Soman, Rohith, Chowdhury, Srabanti, Salahuddin, Sayeef
Format:	Preprint
Published:	2025
Subjects:	Materials Science Applied Physics
Online Access:	Acceder al recurso
Tags:	Add Tag No Tags, Be the first to tag this record!

Internet

https://arxiv.org/abs/2506.16758