Negative capacitance overcomes Schottky-gate limits in GaN high-electron-mobility transistors
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arXiv
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| Main Authors: | , , , , , , , |
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| Format: | Preprint |
| Published: |
2025
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| _version_ | 1866909685015117824 |
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| author | Khan, Asir Intisar Kim, Jeong-Kyu Sikder, Urmita Das, Koushik Rodriguez, Thomas Soman, Rohith Chowdhury, Srabanti Salahuddin, Sayeef |
| author_facet | Khan, Asir Intisar Kim, Jeong-Kyu Sikder, Urmita Das, Koushik Rodriguez, Thomas Soman, Rohith Chowdhury, Srabanti Salahuddin, Sayeef |
| contents | For high-electron-mobility transistors based on two-dimensional electron gas (2DEG) within a quantum well, such as those based on AlGaN/GaN heterostructure, a Schottky-gate is used to maximize the amount of charge that can be induced and thereby the current that can be achieved. However, the Schottky-gate also leads to very high leakage current through the gate electrode. Adding a conventional dielectric layer between the nitride layers and gate metal can reduce leakage; but this comes at the price of a reduced drain current. Here, we used a ferroic HfO2-ZrO2 bilayer as the gate dielectric and achieved a simultaneous increase in the ON current and decrease in the leakage current, a combination otherwise not attainable with conventional dielectrics. This approach surpasses the conventional limits of Schottky GaN transistors and provides a new pathway to improve performance in transistors based on 2DEG. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2506_16758 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Negative capacitance overcomes Schottky-gate limits in GaN high-electron-mobility transistors Khan, Asir Intisar Kim, Jeong-Kyu Sikder, Urmita Das, Koushik Rodriguez, Thomas Soman, Rohith Chowdhury, Srabanti Salahuddin, Sayeef Materials Science Applied Physics For high-electron-mobility transistors based on two-dimensional electron gas (2DEG) within a quantum well, such as those based on AlGaN/GaN heterostructure, a Schottky-gate is used to maximize the amount of charge that can be induced and thereby the current that can be achieved. However, the Schottky-gate also leads to very high leakage current through the gate electrode. Adding a conventional dielectric layer between the nitride layers and gate metal can reduce leakage; but this comes at the price of a reduced drain current. Here, we used a ferroic HfO2-ZrO2 bilayer as the gate dielectric and achieved a simultaneous increase in the ON current and decrease in the leakage current, a combination otherwise not attainable with conventional dielectrics. This approach surpasses the conventional limits of Schottky GaN transistors and provides a new pathway to improve performance in transistors based on 2DEG. |
| title | Negative capacitance overcomes Schottky-gate limits in GaN high-electron-mobility transistors |
| topic | Materials Science Applied Physics |
| url | https://arxiv.org/abs/2506.16758 |