Cover Image

Negative capacitance overcomes Schottky-gate limits in GaN high-electron-mobility transistors

Fuente: arXiv

Saved in:

Bibliographic Details
Main Authors:	Khan, Asir Intisar, Kim, Jeong-Kyu, Sikder, Urmita, Das, Koushik, Rodriguez, Thomas, Soman, Rohith, Chowdhury, Srabanti, Salahuddin, Sayeef
Format:	Preprint
Published:	2025
Subjects:	Materials Science Applied Physics
Online Access:	Acceder al recurso
Tags:	Add Tag No Tags, Be the first to tag this record!

Similar Items

Heavy‐Ion Irradiation Response of Gallium Nitride High‐Electron‐Mobility Transistors with Reduced Surface Field Technology
by: Wiley Yu, et al.
Published: (2026)

Robust Pareto Transistor Sizing of GaN HEMTs for Millimeter-Wave Applications
by: Martinez, Rafael Perez, et al.
Published: (2024)

Cryogenic temperature dependence and hysteresis of surface-trap-induced gate leakage in GaN high-electron-mobility transistors
by: Pan, Ching-Yang, et al.
Published: (2025)

Efficient Optimization Accelerator Framework for Multistate Ising Problems
by: Garg, Chirag, et al.
Published: (2025)

KRAS G12D protein screening for pancreatic cancer clinical trials using an AlGaN/GaN high electron mobility transistor biosensor
by: Hung, Sheng-Ting, et al.
Published: (2025)

Schottky Contact Degradation and Dislocations in AlGaN‐GaN HEMTs
by: Yongkun Sin, et al.
Published: (2025)

Inverse Design of AlGaN/GaN HEMT RF Device with Source Connected Field Plate
by: Aurick Das, et al.
Published: (2025)

Comparison of reverse current mechanisms in GaN Schottky diodes grown on sapphire versus ammonothermal GaN substrates
by: Orfao, B., et al.
Published: (2026)

Coherent Dipolar Coupling between Magnetoelastic Waves and Nitrogen Vacancy Centers
by: Jung, Adi, et al.
Published: (2024)

Modelado de transistores de potencia a base de GaN
by: Andrés Zárate de Landa
Published: (2007)

Electrical characterization of all-epitaxial Fe/GaN(0001) Schottky tunnel contacts
by: Fernàndez-Garrido, Sergio, et al.
Published: (2024)

Hardware Acceleration of Frustrated Lattice Systems using Convolutional Restricted Boltzmann Machine
by: Brahma, Pratik, et al.
Published: (2025)

3D ferroelectric phase field simulations of polycrystalline multi-phase hafnia and zirconia based ultra-thin films
by: Kumar, Prabhat, et al.
Published: (2024)

In-situ tunable giant electrical anisotropy in a grating gated AlGaN/GaN two-dimensional electron gas
by: Wang, Ting-Ting, et al.
Published: (2024)

Potential performance of SiC and GaN based metal semiconductor field effect transistors
by: H. Arabshahi
Published: (2009)

Fractional order capacitance behavior due to hysteresis effect of ferroelectric material on GaN HEMT devices
by: Dariskhem Pyngrope, et al.
Published: (2024)

Design Strategy of Vertical GaN Power Schottky Barrier Diodes with p‐GaN Junction Termination Extension and Experimental Demonstration of Selective p‐Doping by Implantation
by: Hang Chen, et al.
Published: (2024)

Increasing the mobility and power-electronics figure of merit of AlGaN with atomically thin AlN/GaN digital-alloy superlattices
by: Pant, Nick, et al.
Published: (2022)

Ferroelectrically-enhanced Schottky barrier transistors for Logic-in-Memory applications
by: Nazzari, Daniele, et al.
Published: (2024)

GaN‐on‐SiC Broadband Driver Amplifier for C‐ and X‐Band Applications
by: Abdullah Hannan, et al.
Published: (2025)

A Ka‐Band GaN low‐noise amplifier monolithic microwave integrated circuit using external source interconnect for gate‐side parasitic suppression
by: Woojin Chang, et al.
Published: (2025)

PASS: An Asynchronous Probabilistic Processor for Next Generation Intelligence
by: Patel, Saavan, et al.
Published: (2024)

Robustness of GaN on SiC low‐noise amplifiers in common source and cascode configurations for X‐band applications
by: Muhammad Imran Nawaz, et al.
Published: (2024)

Optimization of gate structure towards high‐sensitivity AlGaN/GaN HEMT cortisol detection
by: Hui Chang, et al.
Published: (2024)

Design of high-mobility p-type GaN via the piezomobility tensor
by: Chen, Jie-Cheng, et al.
Published: (2025)

CNN+ViT+SigLiP: A Real-Time Framework for Smart Urban Mobility
by: Chowdhury, Koushik
Published: (2025)

Adversarial Machine Learning: Attacking and Safeguarding Image Datasets
by: Chowdhury, Koushik
Published: (2025)

Impact of planarized gate electrode in bottom-gate thin-film transistors
by: M.A. Domínguez
Published: (2016)

Comparación de modelos lineales en modo pulsado y no pulsado de transistores GaN de potencia
by: Jonathan Raúl Monjardín López
Published: (2014)

Desarrollo de un sistema para caracterizar transistores de potencia (GaN, SiC y LDMOS)
by: José Alfredo Ceseña Barrios
Published: (2015)

Record Negative Photoconductivity in N‐Polar AlGaN/GaN Quantum‐Well Heterostructures
by: Maciej Matys, et al.
Published: (2025)

Proton mobility calculations in the presence of negative capacitances
by: Ruiz Salvador, A. Rabdel
Published: (2025)

Shubnikov-de Haas oscillations of two-dimensional electron gases in AlYN/GaN and AlScN/GaN heterostructures
by: Chen, Yu-Hsin, et al.
Published: (2026)

Optimizing Forward Drop and Reverse Leakage Trade‐Off in AlGaN/GaN Lateral Diode with Schottky‐Metal‐Insulator‐Semiconductor Cascode Anode
by: Fangzhou Wang, et al.
Published: (2024)

Optimizing electrical and thermal performance in AlGaN/GaN HEMT devices using dual‐metal gate technology
by: Preethi Elizabeth Iype, et al.
Published: (2024)

Influence of Crowder Geometry and Flexibility on Polymer Translocation Dynamics
by: Akshay Chauhan, et al.
Published: (2025)

Elastic Relaxation of Coherent InGaN/GaN Interfaces at the Microwire LED Sidewall
by: Jongil Kim, et al.
Published: (2025)

Low Resistivity n‐type GaN Ohmic Contacts on GaN Substrates
by: Adamantia Logotheti, et al.
Published: (2024)

All Nitride NbN/AlGaN/GaN Schottky Gate HEMT on (0001) 4H‐SiC: Improved DC Performance and Metallic Passivation
by: Umang Singh, et al.
Published: (2026)

Effect of temperature on 2D terahertz plasmons and electron effective mass in AlGaN/GaN
by: Dub, M., et al.
Published: (2025)