Imagen de Portada

Nanoscale imaging of reduced forward bias at V-defects in green-emitting nitride LEDs

Fuente: arXiv

Guardado en:

Detalles Bibliográficos
Autores principales:	Fornos, C., Alyabyeva, N., Ho, W. Y., Roubert, C., Tak, T., Speck, J. S., Weisbuch, C., Peretti, J., Rowe, A. C. H.
Formato:	Preprint
Publicado:	2025
Materias:	Applied Physics Materials Science
Acceso en línea:	Acceder al recurso
Etiquetas:	Agregar Etiqueta Sin Etiquetas, Sea el primero en etiquetar este registro!

Ejemplares similares

The Influence of V-Defects, Leakage, and Random Alloy Fluctuations on the Carrier Transport in Red InGaN MQW LEDs
por: Huang, Huai-Chin, et al.
Publicado: (2025)

Origin of the injection-dependent emission blueshift and linewidth broadening of III-nitride light-emitting diodes
por: Pant, Nick, et al.
Publicado: (2022)

Observation of quasi bound states in open quantum wells of cesiated p-doped GaN surfaces
por: Sauty, Mylène, et al.
Publicado: (2025)

Effect of SOI substrate on silicon nitride resistance switching using MIS structure
por: Mavropoulis, A, et al.
Publicado: (2025)

Combination of NIR and UV‐LEDs enables physical and chemical drying of aqueous coating dispersions as new green technology
por: Lukas Appelhoff, et al.
Publicado: (2024)

Frequency comb generation in low-loss, low-stress, high-Q deuterated silicon nitride microring resonators in an 8-inch photonics platform
por: Cao, Y., et al.
Publicado: (2025)

Quantum sensing with spin defects in boron nitride nanotubes
por: Rizzato, Roberto, et al.
Publicado: (2025)

Formation of a lateral p-n junction light-emitting diode on an n-type high-mobility GaAs/Al$_{0.33}$Ga$_{0.67}$As heterostructure
por: Dobney, C. P., et al.
Publicado: (2024)

Identifying electronic transitions of defects in hexagonal boron nitride for quantum memories
por: Cholsuk, Chanaprom, et al.
Publicado: (2023)

Silicon nitride resistance switching MIS cells doped with silicon atoms
por: Mavropoulis, A, et al.
Publicado: (2025)

Reducing the metal-graphene contact resistance through laser-induced defects
por: Jangra, Vikas, et al.
Publicado: (2024)

Nanoscale imaging reveals critical plating and stripping mechanisms in anode-free lithium and sodium solid-state batteries
por: Diaz-Sanchez, J., et al.
Publicado: (2026)

A Novel Injection-Locked S-Band Oven Magnetron System Without Waveguide Isolators
por: Wang, S, et al.
Publicado: (2025)

Membrane phononic crystals for high-Qm mechanical defect modes in piezoelectric aluminum nitride
por: Ciers, Anastasiia, et al.
Publicado: (2025)

Hexagonal boron nitride based photonic quantum technologies
por: Prasad, Madhava Krishna, et al.
Publicado: (2024)

kV-Class Lateral NiOx/GaN Super-Heterojunction Diode via Ammonia Molecular Beam Epitaxy (NH3-MBE)
por: Liu, Yizheng, et al.
Publicado: (2025)

Personality, sex and capture biases: Challenges for predator monitoring and management
por: Kyla C. Johnstone, et al.
Publicado: (2024)

Low and high frequency noise in LEDs
por: Bohomolov, Danylo, et al.
Publicado: (2025)

Microwave interference from a spin ensemble and its mirror image in waveguide magnonics
por: Wu, B. -Y., et al.
Publicado: (2024)

Deep-level structure of the spin-active recombination center in dilute nitrides
por: Ulibarri, A. C., et al.
Publicado: (2023)

An alternative application of GaAs-based light-emitting diodes: X-ray detection and imaging
por: Yu, Quan, et al.
Publicado: (2025)

The hBN defects database: a theoretical compilation of color centers in hexagonal boron nitride
por: Cholsuk, Chanaprom, et al.
Publicado: (2024)

A Bioinspired Aquatic Machine Mimicking Water Caltrop
por: Liu, Yuanquan, et al.
Publicado: (2025)

A 1‐year longitudinal study on experiencing workplace cyberbullying, affective well‐being and work engagement of teachers: The mediating effect of cognitive reappraisal
por: Angel Nga Man Leung, et al.
Publicado: (2024)

In situ investigation of growth modes during plasma-assisted molecular beam epitaxy of (0001)GaN
por: Koblmüller, G., et al.
Publicado: (2024)

Rapid Trapping and Label-free Characterization of Single Nanoscale Extracellular Vesicles and Nanoparticles in Solution
por: Hong, Ikjun, et al.
Publicado: (2024)

A new yellowish‐green‐emitting phosphor: Eu 2+ ‐doped Ba 3 YAl 2 O 7.5
por: Bin Sun, et al.
Publicado: (2024)

Multiparameter admittance spectroscopy for investigating defects in MoS${_2}$ thin film MOSFETs
por: Reato, Eros, et al.
Publicado: (2024)

Ultrafast Electron Microscopy of Nanoscale Charge Dynamics in Semiconductors
por: Yannai, Michael, et al.
Publicado: (2022)

Surface defects in carbon-doped hexagonal boron nitride for negative-contrast direct laser writing
por: Litvinov, Dmitrii, et al.
Publicado: (2026)

Single photon emission and single spin coherence of a nitrogen vacancy centre encapsulated in silicon nitride
por: Smith, Joe A., et al.
Publicado: (2019)

Frequency-Resolved Forward Capacitance in GaN-based LEDs
por: Li, Yuchen, et al.
Publicado: (2024)

Thermal Radiation at the Nanoscale and Applications
por: Chapuis, Pierre-Olivier, et al.
Publicado: (2023)

Artificial Neural Network (ANN) Optimization With MoGEO, Molecular Docking, Pharmacokinetic Studies and DFT Studies of Ruthenium (III) and Vanadium (V) Complexes
por: Jeetha Raj J., et al.
Publicado: (2025)

Lamb wave-based MVDR imaging and CNN classification of defects in pipelines
por: Li, Shuangshuang, et al.
Publicado: (2025)

Temperature-dependent investigation of polarisation doping in 330 nm ultraviolet light-emitting diodes
por: Milner, Peter, et al.
Publicado: (2025)

Thermoelectric power factors of defective scandium nitride nanostructures from first principles
por: Cigarini, Luigi, et al.
Publicado: (2025)

Impact of Surface Passivation on the Efficiency and High-speed Modulation of III-V GaAs/AlGaAs Nanopillar Array LEDs
por: Jacob, Bejoys, et al.
Publicado: (2025)

Violet to near-infrared optical addressing of spin pairs in hexagonal boron nitride
por: Singh, Priya, et al.
Publicado: (2024)

Designing a boron nitride polyethylene composite for shielding neutrons
por: Vira, Advik D., et al.
Publicado: (2022)