Leveraging Transfer Learning to Overcome Data Limitations in Czochralski Crystal Growth

Fuente: arXiv
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Auteurs principaux: Petkovic, Milena, Dropka, Natasha, Tang, Xia, Zittel, Janina
Format: Preprint
Publié: 2025
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author Petkovic, Milena
Dropka, Natasha
Tang, Xia
Zittel, Janina
author_facet Petkovic, Milena
Dropka, Natasha
Tang, Xia
Zittel, Janina
contents The Czochralski (Cz) method is a widely used process for growing high-quality single crystals, critical for applications in semiconductors, optics, and advanced materials. Achieving optimal growth conditions requires precise control of process and furnace design parameters. Still, data scarcity -- especially for new materials -- limits the application of machine learning (ML) in predictive modeling and optimization. This study proposes a transfer learning approach to overcome this limitation by adapting ML models trained on a higher data volume of one source material (Si) to a lower data volume of another target material (Ge and GaAs). The materials were deliberately selected to assess the robustness of the transfer learning approach in handling varying data similarity, with Cz-Ge being similar to Cz-Si, and GaAs grown via the liquid encapsulated Czochralski method (LEC), which differs from Cz-Si. We explore various transfer learning strategies, including Warm Start, Merged Training, and Hyperparameters Transfer, and evaluate multiple ML architectures across two different materials. Our results demonstrate that transfer learning significantly enhances predictive accuracy with minimal data, providing a practical framework for optimizing Cz growth parameters across diverse materials.
format Preprint
id arxiv_https___arxiv_org_abs_2506_18774
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle Leveraging Transfer Learning to Overcome Data Limitations in Czochralski Crystal Growth
Petkovic, Milena
Dropka, Natasha
Tang, Xia
Zittel, Janina
Materials Science
Optimization and Control
The Czochralski (Cz) method is a widely used process for growing high-quality single crystals, critical for applications in semiconductors, optics, and advanced materials. Achieving optimal growth conditions requires precise control of process and furnace design parameters. Still, data scarcity -- especially for new materials -- limits the application of machine learning (ML) in predictive modeling and optimization. This study proposes a transfer learning approach to overcome this limitation by adapting ML models trained on a higher data volume of one source material (Si) to a lower data volume of another target material (Ge and GaAs). The materials were deliberately selected to assess the robustness of the transfer learning approach in handling varying data similarity, with Cz-Ge being similar to Cz-Si, and GaAs grown via the liquid encapsulated Czochralski method (LEC), which differs from Cz-Si. We explore various transfer learning strategies, including Warm Start, Merged Training, and Hyperparameters Transfer, and evaluate multiple ML architectures across two different materials. Our results demonstrate that transfer learning significantly enhances predictive accuracy with minimal data, providing a practical framework for optimizing Cz growth parameters across diverse materials.
title Leveraging Transfer Learning to Overcome Data Limitations in Czochralski Crystal Growth
topic Materials Science
Optimization and Control
url https://arxiv.org/abs/2506.18774