Atomic layer etching of InGaAs using sequential exposures of atomic hydrogen and oxygen gas

Fuente: arXiv

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Bibliographic Details
Main Authors:	Bayrak, Mete M., Ardizzi, Anthony J., Addamane, Sadhvikas, Cleary, Kieran, Minnich, Austin J.
Format:	Preprint
Published:	2025
Subjects:	Materials Science
Online Access:	Acceder al recurso
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Internet

https://arxiv.org/abs/2506.19749