Interplay of magnetic ordering and charge transport in a distorted ScAl$_3$C$_3$-type GdZn$_3$As$_3$
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| Autores principales: | , , , , , , , |
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| Formato: | Preprint |
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2025
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| author | Zhou, Zhiyu Chen, Xiyu Lu, Jia-Yi Zhang, Junchao Luo, Xiong Cao, Guang-Han Dong, Shuai Wang, Zhi-Cheng |
| author_facet | Zhou, Zhiyu Chen, Xiyu Lu, Jia-Yi Zhang, Junchao Luo, Xiong Cao, Guang-Han Dong, Shuai Wang, Zhi-Cheng |
| contents | We present the synthesis and characterization of GdZn$_3$As$_3$, a previously unreported variant of the $RM_3X_3$ family ($R$ = lanthanides; $M$ = Zn, Cd; $X$ = P, As), prepared in both single-crystal and polycrystalline forms. Unlike other $RM_3X_3$ compounds that crystallize in undistorted hexagonal structures, GdZn$_3$As$_3$ adopts a distorted ScAl$_3$C$_3$-type orthorhombic structure with $Cmcm$ space group. Magnetic measurements demonstrate that GdZn$_3$As$_3$ undergoes a ferromagnetic transition at the Curie temperature ($T_{\mathrm{C}}$) of 6.3~K, which is unique among known $RM_3X_3$ materials. This magnetic transition is further confirmed by specific heat and electrical resistivity measurements. GdZn$_3$As$_3$ displays metallic behavior with a pronounced resistivity peak near $T_{\mathrm{C}}$, which is strongly suppressed by magnetic fields, leading to significant negative magnetoresistance. Hall effect measurements reveal a low carrier density and a clear nonlinear anomalous Hall effect in GdZn$_3$As$_3$. Furthermore, both specific heat and resistivity data suggest the presence of additional magnetic transition(s) below $T_{\mathrm{C}}$, requiring further investigation. These results demonstrate that GdZn$_3$As$_3$ possesses distinct structural, magnetic, and electronic transport properties within the $RM_3X_3$ family, establishing it as an exceptional platform for investigating competing magnetic interactions in low-carrier-density rare-earth triangular-lattice systems. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2506_20454 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Interplay of magnetic ordering and charge transport in a distorted ScAl$_3$C$_3$-type GdZn$_3$As$_3$ Zhou, Zhiyu Chen, Xiyu Lu, Jia-Yi Zhang, Junchao Luo, Xiong Cao, Guang-Han Dong, Shuai Wang, Zhi-Cheng Materials Science Strongly Correlated Electrons We present the synthesis and characterization of GdZn$_3$As$_3$, a previously unreported variant of the $RM_3X_3$ family ($R$ = lanthanides; $M$ = Zn, Cd; $X$ = P, As), prepared in both single-crystal and polycrystalline forms. Unlike other $RM_3X_3$ compounds that crystallize in undistorted hexagonal structures, GdZn$_3$As$_3$ adopts a distorted ScAl$_3$C$_3$-type orthorhombic structure with $Cmcm$ space group. Magnetic measurements demonstrate that GdZn$_3$As$_3$ undergoes a ferromagnetic transition at the Curie temperature ($T_{\mathrm{C}}$) of 6.3~K, which is unique among known $RM_3X_3$ materials. This magnetic transition is further confirmed by specific heat and electrical resistivity measurements. GdZn$_3$As$_3$ displays metallic behavior with a pronounced resistivity peak near $T_{\mathrm{C}}$, which is strongly suppressed by magnetic fields, leading to significant negative magnetoresistance. Hall effect measurements reveal a low carrier density and a clear nonlinear anomalous Hall effect in GdZn$_3$As$_3$. Furthermore, both specific heat and resistivity data suggest the presence of additional magnetic transition(s) below $T_{\mathrm{C}}$, requiring further investigation. These results demonstrate that GdZn$_3$As$_3$ possesses distinct structural, magnetic, and electronic transport properties within the $RM_3X_3$ family, establishing it as an exceptional platform for investigating competing magnetic interactions in low-carrier-density rare-earth triangular-lattice systems. |
| title | Interplay of magnetic ordering and charge transport in a distorted ScAl$_3$C$_3$-type GdZn$_3$As$_3$ |
| topic | Materials Science Strongly Correlated Electrons |
| url | https://arxiv.org/abs/2506.20454 |