Scalable and Tunable In-Plane Ge/Si(001) Nanowires Grown by Molecular Beam Epitaxy
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arXiv
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| Main Authors: | , , , , , , , , , |
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| Format: | Preprint |
| Published: |
2025
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| _version_ | 1866911029362950144 |
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| author | Wang, Jian-Huan Ming, Ming Huang, Ding-Ming Zhang, Jie-Yin Luo, Yi Fu, Bin-Xiao Chu, Yi-Xin Yao, Yuan Xu, Hongqi Zhang, Jian-Jun |
| author_facet | Wang, Jian-Huan Ming, Ming Huang, Ding-Ming Zhang, Jie-Yin Luo, Yi Fu, Bin-Xiao Chu, Yi-Xin Yao, Yuan Xu, Hongqi Zhang, Jian-Jun |
| contents | Germanium nanostructures offer significant potential in developing advanced integrated circuit and disruptive quantum technologies, yet achieving both scalability and high carrier mobility remains a challenge in materials science. Here, we report an original low-temperature epitaxial method for growth of site-controlled in-plane germanium nanowires with high hole mobility by molecular beam epitaxy. By reducing the growth temperature, we effectively suppress Si-Ge interdiffusion, ensuring pure germanium composition within the nanowires while preserving their high crystalline quality. The method employs pre-patterned ridges on strain-relaxed Si$_{0.75}$Ge$_{0.25}$/Si(001) substrates as tailored templates, enabling control over the position, length, spacing and cross-sectional shape of the nanowires. Electrical measurements of field-effect devices made from as-grown germanium nanowires show that the nanowires are of hole conduction with mobility exceeding 7000 cm$^{2}$/Vs at 2-20 K. The method paves a way for fabrication of scalable germanium nanowire networks, providing a reliable platform for the developments of high-performance nanoelectronics and multi-qubit chips. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2506_20465 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Scalable and Tunable In-Plane Ge/Si(001) Nanowires Grown by Molecular Beam Epitaxy Wang, Jian-Huan Ming, Ming Huang, Ding-Ming Zhang, Jie-Yin Luo, Yi Fu, Bin-Xiao Chu, Yi-Xin Yao, Yuan Xu, Hongqi Zhang, Jian-Jun Mesoscale and Nanoscale Physics Materials Science Germanium nanostructures offer significant potential in developing advanced integrated circuit and disruptive quantum technologies, yet achieving both scalability and high carrier mobility remains a challenge in materials science. Here, we report an original low-temperature epitaxial method for growth of site-controlled in-plane germanium nanowires with high hole mobility by molecular beam epitaxy. By reducing the growth temperature, we effectively suppress Si-Ge interdiffusion, ensuring pure germanium composition within the nanowires while preserving their high crystalline quality. The method employs pre-patterned ridges on strain-relaxed Si$_{0.75}$Ge$_{0.25}$/Si(001) substrates as tailored templates, enabling control over the position, length, spacing and cross-sectional shape of the nanowires. Electrical measurements of field-effect devices made from as-grown germanium nanowires show that the nanowires are of hole conduction with mobility exceeding 7000 cm$^{2}$/Vs at 2-20 K. The method paves a way for fabrication of scalable germanium nanowire networks, providing a reliable platform for the developments of high-performance nanoelectronics and multi-qubit chips. |
| title | Scalable and Tunable In-Plane Ge/Si(001) Nanowires Grown by Molecular Beam Epitaxy |
| topic | Mesoscale and Nanoscale Physics Materials Science |
| url | https://arxiv.org/abs/2506.20465 |