Computational Design of Two-Dimensional MoSi$_2$N$_4$ Family Field-Effect Transistor for Future Ångström-Scale CMOS Technology Nodes
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arXiv
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| Autori principali: | , , , , , , , , , , , |
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| Natura: | Preprint |
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2025
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| _version_ | 1866909660716466176 |
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| author | Tho, Che Chen Yang, Zongmeng Fang, Shibo Guo, Shiying Cao, Liemao Lau, Chit Siong Liu, Fei Zhang, Shengli Lu, Jing Ang, L. K. Li, Lain-Jong Ang, Yee Sin |
| author_facet | Tho, Che Chen Yang, Zongmeng Fang, Shibo Guo, Shiying Cao, Liemao Lau, Chit Siong Liu, Fei Zhang, Shengli Lu, Jing Ang, L. K. Li, Lain-Jong Ang, Yee Sin |
| contents | Advancing complementary metal-oxide-semiconductor (CMOS) technology into the sub-1-nm angström-scale technology nodes is expected to involve alternative semiconductor channel materials, as silicon transistors encounter severe performance degradation at physical gate lengths below 10 nm. Two-dimensional (2D) semiconductors have emerged as strong candidates for overcoming short-channel effects due to their atomically thin bodies, which inherently suppress electrostatic leakage and improve gate control in aggressively scaled field-effect transistors (FETs). Among the growing library of 2D materials, the MoSi$_2$N$_4$ family -- a synthetic septuple-layered materials -- has attracted increasing attention for its remarkable ambient stability, suitable bandgaps, and favorable carrier transport characteristics, making it a promising platform for next-generation transistors. While experimental realization of sub-10-nm 2D FETs remains technologically demanding, computational device simulation using first-principles density functional theory combined with nonequilibrium Green's function transport simulations provide a powerful and cost-effective route for exploring the performance limits and optimal design of ultrascaled FET. This review consolidates the current progress in the computational design of MoSi$_2$N$_4$ family FETs. We review the physical properties of MoSi$_2$N$_4$ that makes them compelling candidates for transistor applications, as well as the simulated device performance and optimization strategy of MoSi$_2$N$_4$ family FETs. Finally, we identify key challenges and research gaps, and outline future directions that could accelerate the practical deployment of MoSi$_2$N$_4$ family FET in the angström-scale CMOS era. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2506_21366 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Computational Design of Two-Dimensional MoSi$_2$N$_4$ Family Field-Effect Transistor for Future Ångström-Scale CMOS Technology Nodes Tho, Che Chen Yang, Zongmeng Fang, Shibo Guo, Shiying Cao, Liemao Lau, Chit Siong Liu, Fei Zhang, Shengli Lu, Jing Ang, L. K. Li, Lain-Jong Ang, Yee Sin Materials Science Mesoscale and Nanoscale Physics Applied Physics Advancing complementary metal-oxide-semiconductor (CMOS) technology into the sub-1-nm angström-scale technology nodes is expected to involve alternative semiconductor channel materials, as silicon transistors encounter severe performance degradation at physical gate lengths below 10 nm. Two-dimensional (2D) semiconductors have emerged as strong candidates for overcoming short-channel effects due to their atomically thin bodies, which inherently suppress electrostatic leakage and improve gate control in aggressively scaled field-effect transistors (FETs). Among the growing library of 2D materials, the MoSi$_2$N$_4$ family -- a synthetic septuple-layered materials -- has attracted increasing attention for its remarkable ambient stability, suitable bandgaps, and favorable carrier transport characteristics, making it a promising platform for next-generation transistors. While experimental realization of sub-10-nm 2D FETs remains technologically demanding, computational device simulation using first-principles density functional theory combined with nonequilibrium Green's function transport simulations provide a powerful and cost-effective route for exploring the performance limits and optimal design of ultrascaled FET. This review consolidates the current progress in the computational design of MoSi$_2$N$_4$ family FETs. We review the physical properties of MoSi$_2$N$_4$ that makes them compelling candidates for transistor applications, as well as the simulated device performance and optimization strategy of MoSi$_2$N$_4$ family FETs. Finally, we identify key challenges and research gaps, and outline future directions that could accelerate the practical deployment of MoSi$_2$N$_4$ family FET in the angström-scale CMOS era. |
| title | Computational Design of Two-Dimensional MoSi$_2$N$_4$ Family Field-Effect Transistor for Future Ångström-Scale CMOS Technology Nodes |
| topic | Materials Science Mesoscale and Nanoscale Physics Applied Physics |
| url | https://arxiv.org/abs/2506.21366 |