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Computational Design of Two-Dimensional MoSi$_2$N$_4$ Family Field-Effect Transistor for Future Ångström-Scale CMOS Technology Nodes

Fuente: arXiv

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Bibliographic Details
Main Authors:	Tho, Che Chen, Yang, Zongmeng, Fang, Shibo, Guo, Shiying, Cao, Liemao, Lau, Chit Siong, Liu, Fei, Zhang, Shengli, Lu, Jing, Ang, L. K., Li, Lain-Jong, Ang, Yee Sin
Format:	Preprint
Published:	2025
Subjects:	Materials Science Mesoscale and Nanoscale Physics Applied Physics
Online Access:	Acceder al recurso
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