Ultra-small Mode Volume Polariton Condensation via Precision $He^+$ Ion Implantation
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arXiv
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| Main Authors: | , , , , , , , , , |
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| Format: | Preprint |
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2025
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| author | Balas, Y. C. Zhou, X. Cherotchenko, E. Kuznetsov, I. Rajendran, S. K. Paschos, G. G. Trifonov, A. V. Nalitov, A. Ohadi, H. Savvidis, P. G. |
| author_facet | Balas, Y. C. Zhou, X. Cherotchenko, E. Kuznetsov, I. Rajendran, S. K. Paschos, G. G. Trifonov, A. V. Nalitov, A. Ohadi, H. Savvidis, P. G. |
| contents | We present a novel method for generating potential landscapes in GaAs microcavities through focused $He^{+}$ implantation. The ion beam imprints micron-scale patterns of non-radiative centers that deplete the exciton reservoir and form a loss-defined potential minimum. Under non-resonant pumping, the resulting traps have a lateral size $\le 1.2 ~\mathrm{μm}$ and a three-dimensional mode volume of only $\approx 0.6 ~ \mathrm{μm^3}$, small enough to to support a single polariton condensate mode. The implantation process maintains strong coupling and provides lithographic ($ < 300 ~ \mathrm{nm}$) resolution. These loss-engineered traps effectively overcome the micrometer-scale limitations of conventional microcavity patterning techniques, opening new avenues for device development and polariton research within the quantum regime. |
| format | Preprint |
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arxiv_https___arxiv_org_abs_2506_22202 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Ultra-small Mode Volume Polariton Condensation via Precision $He^+$ Ion Implantation Balas, Y. C. Zhou, X. Cherotchenko, E. Kuznetsov, I. Rajendran, S. K. Paschos, G. G. Trifonov, A. V. Nalitov, A. Ohadi, H. Savvidis, P. G. Mesoscale and Nanoscale Physics Materials Science Other Condensed Matter We present a novel method for generating potential landscapes in GaAs microcavities through focused $He^{+}$ implantation. The ion beam imprints micron-scale patterns of non-radiative centers that deplete the exciton reservoir and form a loss-defined potential minimum. Under non-resonant pumping, the resulting traps have a lateral size $\le 1.2 ~\mathrm{μm}$ and a three-dimensional mode volume of only $\approx 0.6 ~ \mathrm{μm^3}$, small enough to to support a single polariton condensate mode. The implantation process maintains strong coupling and provides lithographic ($ < 300 ~ \mathrm{nm}$) resolution. These loss-engineered traps effectively overcome the micrometer-scale limitations of conventional microcavity patterning techniques, opening new avenues for device development and polariton research within the quantum regime. |
| title | Ultra-small Mode Volume Polariton Condensation via Precision $He^+$ Ion Implantation |
| topic | Mesoscale and Nanoscale Physics Materials Science Other Condensed Matter |
| url | https://arxiv.org/abs/2506.22202 |