Brightening interlayer excitons by electric-field-driven hole transfer in bilayer WSe2

Fuente: arXiv
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Autores principales: Ouyang, Tianyi, Liu, Erfu, Cha, Soonyoung, Paudel, Raj Kumar, Sun, Yiyang, Xu, Zhaoran, Taniguchi, Takashi, Watanabe, Kenji, Gabor, Nathaniel M., Chang, Yia-Chung, Lui, Chun Hung
Formato: Preprint
Publicado: 2025
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author Ouyang, Tianyi
Liu, Erfu
Cha, Soonyoung
Paudel, Raj Kumar
Sun, Yiyang
Xu, Zhaoran
Taniguchi, Takashi
Watanabe, Kenji
Gabor, Nathaniel M.
Chang, Yia-Chung
Lui, Chun Hung
author_facet Ouyang, Tianyi
Liu, Erfu
Cha, Soonyoung
Paudel, Raj Kumar
Sun, Yiyang
Xu, Zhaoran
Taniguchi, Takashi
Watanabe, Kenji
Gabor, Nathaniel M.
Chang, Yia-Chung
Lui, Chun Hung
contents We observe the interlayer A1s^I, A2s^I, and B1s^I excitons in bilayer WSe2 under applied electric fields using reflectance contrast spectroscopy. Remarkably, these interlayer excitons remain optically bright despite being well separated from symmetry-matched intralayer excitons-a regime where conventional two-level coupling models fail unless unphysically large coupling strengths are assumed. To uncover the origin of this brightening, we perform density functional theory (DFT) calculations and find that the applied electric field distorts the valence-band Bloch states, driving the hole wavefunction from one layer to the other. This field-driven interlayer hole transfer imparts intralayer character to the interlayer excitons, thereby enhancing their oscillator strength without requiring hybridization with bright intralayer states. Simulations confirm that this mechanism accounts for the major contribution to the observed brightness, with excitonic hybridization playing only a minor role. Our results identify interlayer hole transfer as a robust and general mechanism for brightening interlayer excitons in bilayer transition metal dichalcogenides (TMDs), especially when inter- and intralayer excitons are energetically well separated.
format Preprint
id arxiv_https___arxiv_org_abs_2506_22660
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle Brightening interlayer excitons by electric-field-driven hole transfer in bilayer WSe2
Ouyang, Tianyi
Liu, Erfu
Cha, Soonyoung
Paudel, Raj Kumar
Sun, Yiyang
Xu, Zhaoran
Taniguchi, Takashi
Watanabe, Kenji
Gabor, Nathaniel M.
Chang, Yia-Chung
Lui, Chun Hung
Mesoscale and Nanoscale Physics
Optics
We observe the interlayer A1s^I, A2s^I, and B1s^I excitons in bilayer WSe2 under applied electric fields using reflectance contrast spectroscopy. Remarkably, these interlayer excitons remain optically bright despite being well separated from symmetry-matched intralayer excitons-a regime where conventional two-level coupling models fail unless unphysically large coupling strengths are assumed. To uncover the origin of this brightening, we perform density functional theory (DFT) calculations and find that the applied electric field distorts the valence-band Bloch states, driving the hole wavefunction from one layer to the other. This field-driven interlayer hole transfer imparts intralayer character to the interlayer excitons, thereby enhancing their oscillator strength without requiring hybridization with bright intralayer states. Simulations confirm that this mechanism accounts for the major contribution to the observed brightness, with excitonic hybridization playing only a minor role. Our results identify interlayer hole transfer as a robust and general mechanism for brightening interlayer excitons in bilayer transition metal dichalcogenides (TMDs), especially when inter- and intralayer excitons are energetically well separated.
title Brightening interlayer excitons by electric-field-driven hole transfer in bilayer WSe2
topic Mesoscale and Nanoscale Physics
Optics
url https://arxiv.org/abs/2506.22660