Stateful Logic In-Memory Using Gain-Cell eDRAM
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arXiv
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| Autores principales: | , |
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| Formato: | Preprint |
| Publicado: |
2025
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| _version_ | 1866913917424369664 |
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| author | Hoffer, Barak Kvatinsky, Shahar |
| author_facet | Hoffer, Barak Kvatinsky, Shahar |
| contents | Modern data-intensive applications demand memory solutions that deliver high-density, low-power, and integrated computational capabilities to reduce data movement overhead. This paper presents the use of Gain-Cell embedded DRAM (GC-eDRAM) - a compelling alternative to traditional SRAM and eDRAM - for stateful, in-memory logic. We propose a circuit design that exploits GC-eDRAM's dual-port architecture and nondestructive read operation to perform logic functions directly within the GC-eDRAM memory array. Our simulation results demonstrate a 5us retention time coupled with a 99.5% success rate for computing the logic gates. By incorporating processing-in-memory (PIM) functionality into GC-eDRAM, our approach enhances memory and compute densities, lowers power consumption, and improves overall performance for data-intensive applications. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2506_23185 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Stateful Logic In-Memory Using Gain-Cell eDRAM Hoffer, Barak Kvatinsky, Shahar Emerging Technologies Modern data-intensive applications demand memory solutions that deliver high-density, low-power, and integrated computational capabilities to reduce data movement overhead. This paper presents the use of Gain-Cell embedded DRAM (GC-eDRAM) - a compelling alternative to traditional SRAM and eDRAM - for stateful, in-memory logic. We propose a circuit design that exploits GC-eDRAM's dual-port architecture and nondestructive read operation to perform logic functions directly within the GC-eDRAM memory array. Our simulation results demonstrate a 5us retention time coupled with a 99.5% success rate for computing the logic gates. By incorporating processing-in-memory (PIM) functionality into GC-eDRAM, our approach enhances memory and compute densities, lowers power consumption, and improves overall performance for data-intensive applications. |
| title | Stateful Logic In-Memory Using Gain-Cell eDRAM |
| topic | Emerging Technologies |
| url | https://arxiv.org/abs/2506.23185 |