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Main Authors: Matsuzaka, Mizuki, Kashima, Kotaro, Terai, Koki, Ueda, Takumi, Miyamoto, Ryunosuke, Yamamoto, Takashi, Sambe, Kohei, Akutagawa, Tomoyuki, Kaiju, Hideo
Format: Preprint
Published: 2025
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Online Access:https://arxiv.org/abs/2506.23656
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author Matsuzaka, Mizuki
Kashima, Kotaro
Terai, Koki
Ueda, Takumi
Miyamoto, Ryunosuke
Yamamoto, Takashi
Sambe, Kohei
Akutagawa, Tomoyuki
Kaiju, Hideo
author_facet Matsuzaka, Mizuki
Kashima, Kotaro
Terai, Koki
Ueda, Takumi
Miyamoto, Ryunosuke
Yamamoto, Takashi
Sambe, Kohei
Akutagawa, Tomoyuki
Kaiju, Hideo
contents Recently, chirality-induced spin selectivity (CISS) has been observed in chiral molecules and is attractive for application in magnetoresistance (MR) devices. In this study, we fabricate CISS-based nanodevices consisting of chiral molecules sandwiched between Ni78Fe22 and Au electrodes. Prior to device fabrication, we have synthesized the chiral molecule N-(3S)-3,7-dimethyloctyl[1]benzothieno[3,2-b]benzothiophene-2-carboxyamide (S-BTBT-CONHR) and established a method for fabricating nanodevice electrodes. We have successfully observed a high degree of spin selectivity in S-BTBT-CONHR thin films using magnetic conductive atomic force microscopy (mc-AFM). By combining chiral molecules with our advanced nanofabrication technique, we have successfully fabricated Au/S-BTBT-CONHR/Ni78Fe22 nanodevices and observed the MR effect in the fabricated devices under a low magnetic field at room temperature. These MR curves correspond to the magnetization states of the Ni78Fe22 electrode, indicating that the CISS-based MR effect is successfully observed in the nanodevices under a low magnetic field. This study can lead to the development of CISS-based MR devices under low magnetic fields and provide new insights into the CISS effect mechanism on devices.
format Preprint
id arxiv_https___arxiv_org_abs_2506_23656
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle Magnetoresistance effect based on spin-selective transport in nanodevices using chiral molecules
Matsuzaka, Mizuki
Kashima, Kotaro
Terai, Koki
Ueda, Takumi
Miyamoto, Ryunosuke
Yamamoto, Takashi
Sambe, Kohei
Akutagawa, Tomoyuki
Kaiju, Hideo
Applied Physics
Recently, chirality-induced spin selectivity (CISS) has been observed in chiral molecules and is attractive for application in magnetoresistance (MR) devices. In this study, we fabricate CISS-based nanodevices consisting of chiral molecules sandwiched between Ni78Fe22 and Au electrodes. Prior to device fabrication, we have synthesized the chiral molecule N-(3S)-3,7-dimethyloctyl[1]benzothieno[3,2-b]benzothiophene-2-carboxyamide (S-BTBT-CONHR) and established a method for fabricating nanodevice electrodes. We have successfully observed a high degree of spin selectivity in S-BTBT-CONHR thin films using magnetic conductive atomic force microscopy (mc-AFM). By combining chiral molecules with our advanced nanofabrication technique, we have successfully fabricated Au/S-BTBT-CONHR/Ni78Fe22 nanodevices and observed the MR effect in the fabricated devices under a low magnetic field at room temperature. These MR curves correspond to the magnetization states of the Ni78Fe22 electrode, indicating that the CISS-based MR effect is successfully observed in the nanodevices under a low magnetic field. This study can lead to the development of CISS-based MR devices under low magnetic fields and provide new insights into the CISS effect mechanism on devices.
title Magnetoresistance effect based on spin-selective transport in nanodevices using chiral molecules
topic Applied Physics
url https://arxiv.org/abs/2506.23656