Density functional theory study of effect of NO annealing on electronic structure and carrier-scattering property of 4H-SiC(0001)/SiO$_2$ interface

Fuente: arXiv

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Bibliographic Details
Main Authors:	Funaki, Nahoto, Sugiyama, Kosei, Uemoto, Mitsuharu, Ono, Tomoya
Format:	Preprint
Published:	2025
Subjects:	Materials Science
Online Access:	Acceder al recurso
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Internet

https://arxiv.org/abs/2506.23912