Density functional theory study of effect of NO annealing on electronic structure and carrier-scattering property of 4H-SiC(0001)/SiO$_2$ interface
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arXiv
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| Autori principali: | , , , |
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| Natura: | Preprint |
| Pubblicazione: |
2025
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| _version_ | 1866916828713844736 |
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| author | Funaki, Nahoto Sugiyama, Kosei Uemoto, Mitsuharu Ono, Tomoya |
| author_facet | Funaki, Nahoto Sugiyama, Kosei Uemoto, Mitsuharu Ono, Tomoya |
| contents | The effect of the nitrided layer introduced by NO annealing on the electronic structure and carrier scattering property of the 4H-SiC(0001)/SiO$_2$ interface is investigated by the density functional theory calculation using the interface models where the areal N atom density corresponds to that in practical devices. The areal N atom density is one third of the areal C atom density in practical devices. It is found that the nitrided layer screens the unfavorable Coulomb interaction of O atoms in the SiO$_2$. However, the electrons flowing under the nitrided layer are significantly scattered by the fluctuation of potential due to the low areal N atom density. These results imply that the areal N atom density should be increased so that the fluctuation of potential is suppressed. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2506_23912 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Density functional theory study of effect of NO annealing on electronic structure and carrier-scattering property of 4H-SiC(0001)/SiO$_2$ interface Funaki, Nahoto Sugiyama, Kosei Uemoto, Mitsuharu Ono, Tomoya Materials Science The effect of the nitrided layer introduced by NO annealing on the electronic structure and carrier scattering property of the 4H-SiC(0001)/SiO$_2$ interface is investigated by the density functional theory calculation using the interface models where the areal N atom density corresponds to that in practical devices. The areal N atom density is one third of the areal C atom density in practical devices. It is found that the nitrided layer screens the unfavorable Coulomb interaction of O atoms in the SiO$_2$. However, the electrons flowing under the nitrided layer are significantly scattered by the fluctuation of potential due to the low areal N atom density. These results imply that the areal N atom density should be increased so that the fluctuation of potential is suppressed. |
| title | Density functional theory study of effect of NO annealing on electronic structure and carrier-scattering property of 4H-SiC(0001)/SiO$_2$ interface |
| topic | Materials Science |
| url | https://arxiv.org/abs/2506.23912 |