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Density functional theory study of effect of NO annealing on electronic structure and carrier-scattering property of 4H-SiC(0001)/SiO$_2$ interface

Fuente: arXiv

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Detalles Bibliográficos
Autores principales:	Funaki, Nahoto, Sugiyama, Kosei, Uemoto, Mitsuharu, Ono, Tomoya
Formato:	Preprint
Publicado:	2025
Materias:	Materials Science
Acceso en línea:	Acceder al recurso
Etiquetas:	Agregar Etiqueta Sin Etiquetas, Sea el primero en etiquetar este registro!

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