Development of an Atomic Layer Deposition System for Deposition of Alumina as a Hydrogen Permeation Barrier

Fuente: arXiv
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Autores principales: Robinson, Zachary R., Woodward, Jeffrey, Kozen, Alexander C., Ruby, Joshua, Liao, Tyler, Herter, Luke, Ahmadov, Rashad, Wittman, Mark D., Sharpe, Matthew
Formato: Preprint
Publicado: 2025
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author Robinson, Zachary R.
Woodward, Jeffrey
Kozen, Alexander C.
Ruby, Joshua
Liao, Tyler
Herter, Luke
Ahmadov, Rashad
Wittman, Mark D.
Sharpe, Matthew
author_facet Robinson, Zachary R.
Woodward, Jeffrey
Kozen, Alexander C.
Ruby, Joshua
Liao, Tyler
Herter, Luke
Ahmadov, Rashad
Wittman, Mark D.
Sharpe, Matthew
contents Tritium permeation into and through materials poses a critical challenge for the development of nuclear fusion reactors. Minimizing tritium permeation is essential for the safe and efficient use of available fuel supplies. In this work, we present the design, construction, and validation of custom atomic layer deposition (ALD) and deuterium permeation measurement systems aimed at developing thin-film hydrogen permeation barriers. Using the ALD system, we deposited conformal Al2O3 films on copper foil substrates and characterized their growth behavior, morphology, and composition. ALD growth rates of 1.1 angstrom/cycle were achieved for temperatures between 100 degrees C and 210 degrees C. Permeation measurements on bare and ALD-coated copper foils revealed a significant reduction in deuterium flux with the addition of a 10nm Al2O3 layer. While bare copper followed diffusion-limited transport consistent with Sievert's law, the ALD-coated samples exhibited surface-limited, pore-mediated transport with linear pressure dependence. Arrhenius analysis showed distinct differences in activation energy for the two transport regimes, and permeation reduction factors (PRFs) exceeding an order of magnitude were observed. These results demonstrate the potential of ALD-grown Al2O3 films as effective hydrogen isotope barriers and provide a foundation for future studies on film optimization and integration into fusion-relevant components.
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id arxiv_https___arxiv_org_abs_2507_00958
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle Development of an Atomic Layer Deposition System for Deposition of Alumina as a Hydrogen Permeation Barrier
Robinson, Zachary R.
Woodward, Jeffrey
Kozen, Alexander C.
Ruby, Joshua
Liao, Tyler
Herter, Luke
Ahmadov, Rashad
Wittman, Mark D.
Sharpe, Matthew
Materials Science
Tritium permeation into and through materials poses a critical challenge for the development of nuclear fusion reactors. Minimizing tritium permeation is essential for the safe and efficient use of available fuel supplies. In this work, we present the design, construction, and validation of custom atomic layer deposition (ALD) and deuterium permeation measurement systems aimed at developing thin-film hydrogen permeation barriers. Using the ALD system, we deposited conformal Al2O3 films on copper foil substrates and characterized their growth behavior, morphology, and composition. ALD growth rates of 1.1 angstrom/cycle were achieved for temperatures between 100 degrees C and 210 degrees C. Permeation measurements on bare and ALD-coated copper foils revealed a significant reduction in deuterium flux with the addition of a 10nm Al2O3 layer. While bare copper followed diffusion-limited transport consistent with Sievert's law, the ALD-coated samples exhibited surface-limited, pore-mediated transport with linear pressure dependence. Arrhenius analysis showed distinct differences in activation energy for the two transport regimes, and permeation reduction factors (PRFs) exceeding an order of magnitude were observed. These results demonstrate the potential of ALD-grown Al2O3 films as effective hydrogen isotope barriers and provide a foundation for future studies on film optimization and integration into fusion-relevant components.
title Development of an Atomic Layer Deposition System for Deposition of Alumina as a Hydrogen Permeation Barrier
topic Materials Science
url https://arxiv.org/abs/2507.00958