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| Main Authors: | , , , , |
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| Format: | Preprint |
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2025
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| Online Access: | https://arxiv.org/abs/2507.01256 |
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| _version_ | 1866911033497485312 |
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| author | Xiong, Wu Han, Zhongjuan Xia, Zhonghao Yang, Zhilong He, Jiangang |
| author_facet | Xiong, Wu Han, Zhongjuan Xia, Zhonghao Yang, Zhilong He, Jiangang |
| contents | The intrinsic entanglement between electrical conductivity ($σ$) and the Seebeck coefficient ($S$) significantly constrains power factor (PF) enhancement in thermoelectric (TE) materials. While high valley degeneracy ($N_{\mathrm{vk}}$) effectively balances $σ$ and $S$ to improve PF, identifying compounds with high $N_{\mathrm{vk}}$ remains challenging. In this study, we develop an effective approach to rapid discover $p$-type semiconductors with high $N_{\mathrm{vk}}$ through manipulating anion-$p$ and cation-$d$ orbital coupling. By prohibiting $p$-$d$ orbital coupling at the $Γ$ point, the valence band maximum shifts away from the $Γ$ point (where $N_{\mathrm{vk}}$=1), thereby increasing $N_{\mathrm{vk}}$. Through the examination of the common irreducible representations of anion-$p$ and cation-$d$ orbitals at the $Γ$ point, we identify 7 compounds with $N_{\mathrm{vk}}$ $\ge$ 6 from 921 binary and ternary semiconductors. First-principles calculations with electron-phonon coupling demonstrate that PtP$_2$, PtAs$_2$, and PtS$_2$ exhibit exceptionally high PFs of 130, 127, and 82 $μ$Wcm$^{-1}$K$^{-2}$ at 300K, respectively, which are three to five times higher than those of the well-studied TE materials. This work not only elucidates the underlying mechanism of high $N_{\mathrm{vk}}$ formation through group theory, but also establishes an efficient high-PF material discovery paradigm, extended to more complex systems. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2507_01256 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Forbidden p-d Orbital Coupling Accelerates High-Power-Factor Materials Discovery Xiong, Wu Han, Zhongjuan Xia, Zhonghao Yang, Zhilong He, Jiangang Materials Science The intrinsic entanglement between electrical conductivity ($σ$) and the Seebeck coefficient ($S$) significantly constrains power factor (PF) enhancement in thermoelectric (TE) materials. While high valley degeneracy ($N_{\mathrm{vk}}$) effectively balances $σ$ and $S$ to improve PF, identifying compounds with high $N_{\mathrm{vk}}$ remains challenging. In this study, we develop an effective approach to rapid discover $p$-type semiconductors with high $N_{\mathrm{vk}}$ through manipulating anion-$p$ and cation-$d$ orbital coupling. By prohibiting $p$-$d$ orbital coupling at the $Γ$ point, the valence band maximum shifts away from the $Γ$ point (where $N_{\mathrm{vk}}$=1), thereby increasing $N_{\mathrm{vk}}$. Through the examination of the common irreducible representations of anion-$p$ and cation-$d$ orbitals at the $Γ$ point, we identify 7 compounds with $N_{\mathrm{vk}}$ $\ge$ 6 from 921 binary and ternary semiconductors. First-principles calculations with electron-phonon coupling demonstrate that PtP$_2$, PtAs$_2$, and PtS$_2$ exhibit exceptionally high PFs of 130, 127, and 82 $μ$Wcm$^{-1}$K$^{-2}$ at 300K, respectively, which are three to five times higher than those of the well-studied TE materials. This work not only elucidates the underlying mechanism of high $N_{\mathrm{vk}}$ formation through group theory, but also establishes an efficient high-PF material discovery paradigm, extended to more complex systems. |
| title | Forbidden p-d Orbital Coupling Accelerates High-Power-Factor Materials Discovery |
| topic | Materials Science |
| url | https://arxiv.org/abs/2507.01256 |