1/ f noise and two-level systems in MBE-grown Al thin films
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arXiv
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| Main Authors: | , , , , , , , , , , , |
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| Format: | Preprint |
| Published: |
2025
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| _version_ | 1866912763356381184 |
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| author | Sahu, Shouray Kumar Lin, Yen-Hsun Glen Lai, Kuan-Hui Cheng, Chao-Kai Wu, Chun-Wei Heredia, Elica Anne Wang, Ray-Tai Lin, Yen-Hsiang Kwo, Juainai Hong, Minghwei Lin, Juhn-Jong Yeh, Sheng-Shiuan |
| author_facet | Sahu, Shouray Kumar Lin, Yen-Hsun Glen Lai, Kuan-Hui Cheng, Chao-Kai Wu, Chun-Wei Heredia, Elica Anne Wang, Ray-Tai Lin, Yen-Hsiang Kwo, Juainai Hong, Minghwei Lin, Juhn-Jong Yeh, Sheng-Shiuan |
| contents | Aluminum thin films are essential to the functionalities of electronic and quantum devices, where two-level systems (TLS) can degrade device performance. MBE-grown Al films may appeal to these applications due to their low TLS densities. We studied the energy distributions of TLS densities, g(E), in 10-nm-thick MBE-grown and electron-beam evaporated Al films through 1/f noise measurements between 80 and 360 K. At 300 K, the noise magnitudes in MBE-grown films are about three times lower than in the electron-beam evaporated films, corresponding to the g(E) values about ten times lower in the former than in the latter. Compared with previously established observations, we identified that the 1/f noise was generated by thermally activated TLS at grain boundaries. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2507_01850 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | 1/ f noise and two-level systems in MBE-grown Al thin films Sahu, Shouray Kumar Lin, Yen-Hsun Glen Lai, Kuan-Hui Cheng, Chao-Kai Wu, Chun-Wei Heredia, Elica Anne Wang, Ray-Tai Lin, Yen-Hsiang Kwo, Juainai Hong, Minghwei Lin, Juhn-Jong Yeh, Sheng-Shiuan Materials Science Aluminum thin films are essential to the functionalities of electronic and quantum devices, where two-level systems (TLS) can degrade device performance. MBE-grown Al films may appeal to these applications due to their low TLS densities. We studied the energy distributions of TLS densities, g(E), in 10-nm-thick MBE-grown and electron-beam evaporated Al films through 1/f noise measurements between 80 and 360 K. At 300 K, the noise magnitudes in MBE-grown films are about three times lower than in the electron-beam evaporated films, corresponding to the g(E) values about ten times lower in the former than in the latter. Compared with previously established observations, we identified that the 1/f noise was generated by thermally activated TLS at grain boundaries. |
| title | 1/ f noise and two-level systems in MBE-grown Al thin films |
| topic | Materials Science |
| url | https://arxiv.org/abs/2507.01850 |