The impact of process steps on nearly ideal subthreshold slope in 300-mm compatible InGaZnO TFT
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arXiv
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| Autores principales: | , , , , , , , , , , , , , , , , |
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| Formato: | Preprint |
| Publicado: |
2025
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| Acceso en línea: | |
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| _version_ | 1866915369650749440 |
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| author | Tang, Hongwei Lin, Dennis Subhechha, Subhali Chasin, Adrian Matsubayashi, Daisuke van Setten, Michiel Wan, Yiqun Dekkers, Harold Li, Jie Subramanian, Shruthi Chen, Zhuo Rassoul, Nouredine Jiang, Yuchao Van Houdt, Jan Afanas`ev, Valeri Kar, Gouri Sankar Belmonte, Attilio |
| author_facet | Tang, Hongwei Lin, Dennis Subhechha, Subhali Chasin, Adrian Matsubayashi, Daisuke van Setten, Michiel Wan, Yiqun Dekkers, Harold Li, Jie Subramanian, Shruthi Chen, Zhuo Rassoul, Nouredine Jiang, Yuchao Van Houdt, Jan Afanas`ev, Valeri Kar, Gouri Sankar Belmonte, Attilio |
| contents | While we demonstrate a back-gated (BG) amorphous Indium-Gallium-Zinc-Oxide (a-IGZO) transistors with a nearly ideal subthreshold slope (SS) ~ 60 mV/dec. However, SS degrades when a top-gated (TG) configuration is implemented. The energy distribution of traps inferred from temperature-dependent (T = 4 K - 300 K) and multi-frequency (f = 1 kHz - 100 kHz) admittance measurements, reveals a much higher trap density in TG devices. By analyzing the impact of each process step and conducting forming gas anneal (FGA) experiments, we reveal the role of hydrogen in the deterioration of the SS in the IGZO-based transistors. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2507_01901 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | The impact of process steps on nearly ideal subthreshold slope in 300-mm compatible InGaZnO TFT Tang, Hongwei Lin, Dennis Subhechha, Subhali Chasin, Adrian Matsubayashi, Daisuke van Setten, Michiel Wan, Yiqun Dekkers, Harold Li, Jie Subramanian, Shruthi Chen, Zhuo Rassoul, Nouredine Jiang, Yuchao Van Houdt, Jan Afanas`ev, Valeri Kar, Gouri Sankar Belmonte, Attilio Applied Physics Materials Science While we demonstrate a back-gated (BG) amorphous Indium-Gallium-Zinc-Oxide (a-IGZO) transistors with a nearly ideal subthreshold slope (SS) ~ 60 mV/dec. However, SS degrades when a top-gated (TG) configuration is implemented. The energy distribution of traps inferred from temperature-dependent (T = 4 K - 300 K) and multi-frequency (f = 1 kHz - 100 kHz) admittance measurements, reveals a much higher trap density in TG devices. By analyzing the impact of each process step and conducting forming gas anneal (FGA) experiments, we reveal the role of hydrogen in the deterioration of the SS in the IGZO-based transistors. |
| title | The impact of process steps on nearly ideal subthreshold slope in 300-mm compatible InGaZnO TFT |
| topic | Applied Physics Materials Science |
| url | https://arxiv.org/abs/2507.01901 |