Enhancement of quantum coherence in solid-state qubits via interface engineering
Fuente:
arXiv
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| Autores principales: | , , , , , , , , , , |
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| Formato: | Preprint |
| Publicado: |
2025
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| Materias: | |
| Acceso en línea: | |
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| _version_ | 1866915370213834752 |
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| author | Lo, Wing Ki Zhang, Yaowen Chow, Ho Yin Wu, Jiahao Leung, Man Yin Ho, Kin On Du, Xuliang Chen, Yifan Shen, Yang Pan, Ding Yang, Sen |
| author_facet | Lo, Wing Ki Zhang, Yaowen Chow, Ho Yin Wu, Jiahao Leung, Man Yin Ho, Kin On Du, Xuliang Chen, Yifan Shen, Yang Pan, Ding Yang, Sen |
| contents | Shallow nitrogen-vacancy (NV) centers in diamond are promising quantum sensors but suffer from noise-induced short coherence times due to bulk and surface impurities. We present interfacial engineering via oxygen termination and graphene patching, extending shallow NV coherence to over 1 ms, approaching the T1 limit. Raman spectroscopy and density-functional theory reveal surface termination-driven graphene charge transfer reduces spin noise by pairing surface electrons, supported by double electron-electron resonance spectroscopy showing fewer unpaired spins. Enhanced sensitivity enables detection of single weakly coupled 13C nuclear spins and external 11B spins from a hexagonal boron nitride (h-BN) layer, achieving nanoscale nuclear magnetic resonance. A protective h-BN top layer stabilizes the platform, ensuring robustness against harsh treatments and compatibility with target materials. This integrated approach advances practical quantum sensing by combining extended coherence, improved sensitivity, and device durability. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2507_02312 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Enhancement of quantum coherence in solid-state qubits via interface engineering Lo, Wing Ki Zhang, Yaowen Chow, Ho Yin Wu, Jiahao Leung, Man Yin Ho, Kin On Du, Xuliang Chen, Yifan Shen, Yang Pan, Ding Yang, Sen Mesoscale and Nanoscale Physics Quantum Physics Shallow nitrogen-vacancy (NV) centers in diamond are promising quantum sensors but suffer from noise-induced short coherence times due to bulk and surface impurities. We present interfacial engineering via oxygen termination and graphene patching, extending shallow NV coherence to over 1 ms, approaching the T1 limit. Raman spectroscopy and density-functional theory reveal surface termination-driven graphene charge transfer reduces spin noise by pairing surface electrons, supported by double electron-electron resonance spectroscopy showing fewer unpaired spins. Enhanced sensitivity enables detection of single weakly coupled 13C nuclear spins and external 11B spins from a hexagonal boron nitride (h-BN) layer, achieving nanoscale nuclear magnetic resonance. A protective h-BN top layer stabilizes the platform, ensuring robustness against harsh treatments and compatibility with target materials. This integrated approach advances practical quantum sensing by combining extended coherence, improved sensitivity, and device durability. |
| title | Enhancement of quantum coherence in solid-state qubits via interface engineering |
| topic | Mesoscale and Nanoscale Physics Quantum Physics |
| url | https://arxiv.org/abs/2507.02312 |