Ferroelectrically Switchable Half-Quantized Hall Effect
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| Main Authors: | , , , , , , , |
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| Format: | Preprint |
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2025
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| _version_ | 1866911039744901120 |
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| author | Muzaffar, M. U. Bai, Kai-Zhi Qin, Wei Cao, Guohua Fu, Bo Cui, Ping Shen, Shun-Qing Zhang, Zhenyu |
| author_facet | Muzaffar, M. U. Bai, Kai-Zhi Qin, Wei Cao, Guohua Fu, Bo Cui, Ping Shen, Shun-Qing Zhang, Zhenyu |
| contents | Integrating ferroelectricity, antiferromagnetism, and topological quantum transport within a single material is rare, but crucial for developing next-generation quantum devices. Here, we propose a multiferroic heterostructure consisting of an antiferromagnetic MnBi$_2$Te$_4$ bilayer and an Sb$_2$Te$_3$ film is able to harbor the half-quantized Hall (HQH) effect with a ferroelectrically switchable Hall conductivity of $e^2/2h$. We first show that, in the energetically stable configuration, the antiferromagnetic MnBi$_2$Te$_4$ bilayer opens a gap in the top surface bands of Sb$_2$Te$_3$ through proximity effect, while its bottom surface bands remain gapless; consequently, HQH conductivity of $e^2/2h$ can be sustained clockwise or counterclockwise depending on antiferromagnetic configuration of the MnBi$_2$Te$_4$. Remarkably, when applying interlayer sliding within the MnBi$_2$Te$_4$ bilayer, its electric polarization direction associated with parity-time reversal symmetry breaking is reversed, accompanied by a reversal of the HQH conductivity. The proposed approach offers a powerful route to control topological quantum transport in antiferromagnetic materials by ferroelectricity. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2507_03985 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Ferroelectrically Switchable Half-Quantized Hall Effect Muzaffar, M. U. Bai, Kai-Zhi Qin, Wei Cao, Guohua Fu, Bo Cui, Ping Shen, Shun-Qing Zhang, Zhenyu Mesoscale and Nanoscale Physics Materials Science Integrating ferroelectricity, antiferromagnetism, and topological quantum transport within a single material is rare, but crucial for developing next-generation quantum devices. Here, we propose a multiferroic heterostructure consisting of an antiferromagnetic MnBi$_2$Te$_4$ bilayer and an Sb$_2$Te$_3$ film is able to harbor the half-quantized Hall (HQH) effect with a ferroelectrically switchable Hall conductivity of $e^2/2h$. We first show that, in the energetically stable configuration, the antiferromagnetic MnBi$_2$Te$_4$ bilayer opens a gap in the top surface bands of Sb$_2$Te$_3$ through proximity effect, while its bottom surface bands remain gapless; consequently, HQH conductivity of $e^2/2h$ can be sustained clockwise or counterclockwise depending on antiferromagnetic configuration of the MnBi$_2$Te$_4$. Remarkably, when applying interlayer sliding within the MnBi$_2$Te$_4$ bilayer, its electric polarization direction associated with parity-time reversal symmetry breaking is reversed, accompanied by a reversal of the HQH conductivity. The proposed approach offers a powerful route to control topological quantum transport in antiferromagnetic materials by ferroelectricity. |
| title | Ferroelectrically Switchable Half-Quantized Hall Effect |
| topic | Mesoscale and Nanoscale Physics Materials Science |
| url | https://arxiv.org/abs/2507.03985 |