The Ferroelectric Superconducting Field Effect Transistor
Fuente:
arXiv
Enregistré dans:
| Auteurs principaux: | , , , , , |
|---|---|
| Format: | Preprint |
| Publié: |
2025
|
| Sujets: | |
| Accès en ligne: | |
| Tags: |
Ajouter un tag
Pas de tags, Soyez le premier à ajouter un tag!
|
| _version_ | 1866909677339541504 |
|---|---|
| author | Paghi, Alessandro Borgongino, Laura Strambini, Elia De Simoni, Giorgio Sorba, Lucia Giazotto, Francesco |
| author_facet | Paghi, Alessandro Borgongino, Laura Strambini, Elia De Simoni, Giorgio Sorba, Lucia Giazotto, Francesco |
| contents | The ferroelectric field-effect transistor (Fe-FET) is a three-terminal semiconducting device first introduced in the 1950s. Despite its potential, a significant boost in Fe-FET research occurred about ten years ago with the discovery of ferroelectricity in hafnium oxide. This material has been incorporated into electronic processes since the mid-2000s. Here, we observed ferroelectricity in a superconducting Josephson FET (Fe-JoFET) operating at cryogenic temperatures below 1 Kelvin. The Fe-JoFET was fabricated on the InAsOI platform, which features an InAs epilayer hosted by an electrical insulating substrate, using HfO2 as the gate insulator, making it a promising candidate due to its ferroelectric properties. The Fe-JoFET exhibits significant hysteresis in the switching current and normal-state resistance transfer characteristics, which depend on the range of gate voltages. This phenomenon opens a new research area exploring the interaction between ferroelectricity and superconductivity in hybrid superconducting-semiconducting systems, with potential applications in cryogenic data storage and computation. Supporting this, the Fe-JoFET was operated as a cryogenic superconducting single memory cell, exhibiting both dissipative and non-dissipative states. Its non-volatility was tested over a 24-hour measurement period. We also demonstrated that the Fe-JoFET can retain information at temperatures above the superconductor critical temperature, resulting in a temperature-fault-tolerant memory cell resistant to temperature oscillations or, in the worst case, cryostat faults. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2507_04773 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | The Ferroelectric Superconducting Field Effect Transistor Paghi, Alessandro Borgongino, Laura Strambini, Elia De Simoni, Giorgio Sorba, Lucia Giazotto, Francesco Superconductivity Mesoscale and Nanoscale Physics Materials Science The ferroelectric field-effect transistor (Fe-FET) is a three-terminal semiconducting device first introduced in the 1950s. Despite its potential, a significant boost in Fe-FET research occurred about ten years ago with the discovery of ferroelectricity in hafnium oxide. This material has been incorporated into electronic processes since the mid-2000s. Here, we observed ferroelectricity in a superconducting Josephson FET (Fe-JoFET) operating at cryogenic temperatures below 1 Kelvin. The Fe-JoFET was fabricated on the InAsOI platform, which features an InAs epilayer hosted by an electrical insulating substrate, using HfO2 as the gate insulator, making it a promising candidate due to its ferroelectric properties. The Fe-JoFET exhibits significant hysteresis in the switching current and normal-state resistance transfer characteristics, which depend on the range of gate voltages. This phenomenon opens a new research area exploring the interaction between ferroelectricity and superconductivity in hybrid superconducting-semiconducting systems, with potential applications in cryogenic data storage and computation. Supporting this, the Fe-JoFET was operated as a cryogenic superconducting single memory cell, exhibiting both dissipative and non-dissipative states. Its non-volatility was tested over a 24-hour measurement period. We also demonstrated that the Fe-JoFET can retain information at temperatures above the superconductor critical temperature, resulting in a temperature-fault-tolerant memory cell resistant to temperature oscillations or, in the worst case, cryostat faults. |
| title | The Ferroelectric Superconducting Field Effect Transistor |
| topic | Superconductivity Mesoscale and Nanoscale Physics Materials Science |
| url | https://arxiv.org/abs/2507.04773 |