Variability of hole spin qubits in planar Germanium
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arXiv
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| Format: | Preprint |
| Published: |
2025
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| _version_ | 1866914356983234560 |
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| author | Martinez, Biel Niquet, Yann-Michel |
| author_facet | Martinez, Biel Niquet, Yann-Michel |
| contents | Hole spin qubits in Ge/GeSi heterostructures benefit from the clean environment of epitaxial interfaces and from the intrinsic spin-orbit coupling that enables efficient electrical control, which makes them promising candidates for quantum computation. However, spin-orbit coupling also enhances the sensitivity to electrical disorder, potentially increasing variability. In this work, we perform numerical simulations in a realistic device geometry to quantify the variability of the charge and spin properties of Ge qubits induced by charge traps at the SiGe/oxide interfaces. We show that while the variability of charge properties remains moderate, spin properties (g-factors and Rabi frequencies) show significant dispersion. We explore the implications of this variability for large-scale architectures, and provide guidelines to minimize variability both in terms of interface quality requirements and optimal operation strategies. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2507_04953 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Variability of hole spin qubits in planar Germanium Martinez, Biel Niquet, Yann-Michel Mesoscale and Nanoscale Physics Hole spin qubits in Ge/GeSi heterostructures benefit from the clean environment of epitaxial interfaces and from the intrinsic spin-orbit coupling that enables efficient electrical control, which makes them promising candidates for quantum computation. However, spin-orbit coupling also enhances the sensitivity to electrical disorder, potentially increasing variability. In this work, we perform numerical simulations in a realistic device geometry to quantify the variability of the charge and spin properties of Ge qubits induced by charge traps at the SiGe/oxide interfaces. We show that while the variability of charge properties remains moderate, spin properties (g-factors and Rabi frequencies) show significant dispersion. We explore the implications of this variability for large-scale architectures, and provide guidelines to minimize variability both in terms of interface quality requirements and optimal operation strategies. |
| title | Variability of hole spin qubits in planar Germanium |
| topic | Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2507.04953 |