Atomistic study of dislocation formation during Ge epitaxy on Si

Fuente: arXiv

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Bibliographic Details
Main Authors:	Martín-Encinar, Luis, Marqués, Luis A., Santos, Iván, Pelaz, Lourdes
Format:	Preprint
Published:	2025
Subjects:	Materials Science Computational Physics
Online Access:	Acceder al recurso
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Internet

https://arxiv.org/abs/2507.05082