Atomistic study of dislocation formation during Ge epitaxy on Si
Fuente:
arXiv
Saved in:
| Main Authors: | Martín-Encinar, Luis, Marqués, Luis A., Santos, Iván, Pelaz, Lourdes |
|---|---|
| Format: | Preprint |
| Published: |
2025
|
| Subjects: | |
| Online Access: | |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Similar Items
3D lattice Monte Carlo modeling of morphology formation of Si/SiOx nanocomposites during phase separation of nonstoichiometric Si oxide films
by: Oliinyk, Ivan, et al.
Published: (2025)
by: Oliinyk, Ivan, et al.
Published: (2025)
Quantitative analysis of the prediction performance of a Convolutional Neural Network evaluating the surface elastic energy of a strained film
by: Encinar, Luis Martín, et al.
Published: (2024)
by: Encinar, Luis Martín, et al.
Published: (2024)
Ultra-thin strain-relieving Si$_{1-x}$Ge$_x$ layers enabling III-V epitaxy on Si
by: Smith, Trevor R., et al.
Published: (2024)
by: Smith, Trevor R., et al.
Published: (2024)
First-principles calculation of scattering potentials of Si-Ge and Sn-Ge dimers on Ge(001) surfaces
by: Ono, Tomoya
Published: (2012)
by: Ono, Tomoya
Published: (2012)
Si/SiGe multi-channel superlattice structure epitaxial growth with segmented temperature control for Next-Generation Logic Devices
by: Yao, Wenlong, et al.
Published: (2026)
by: Yao, Wenlong, et al.
Published: (2026)
From anti-Arrhenius to Arrhenius behavior in a dislocation-obstacle bypass: Atomistic Simulations and Theoretical Investigation
by: Nahavandian, Mohammadhossein, et al.
Published: (2024)
by: Nahavandian, Mohammadhossein, et al.
Published: (2024)
Generalized Representative Structures for Atomistic Systems
by: Goff, James M., et al.
Published: (2024)
by: Goff, James M., et al.
Published: (2024)
Inevitable Si surface passivation prior to III-V/Si epitaxy: A strong impact on wetting properties
by: Chandrasekharan, S. Pallikkara, et al.
Published: (2023)
by: Chandrasekharan, S. Pallikkara, et al.
Published: (2023)
Harnessing AtomisticSkills for Agentic Atomistic Research
by: Deng, Bowen, et al.
Published: (2026)
by: Deng, Bowen, et al.
Published: (2026)
Design, fabrication, and performance of a versatile graphene epitaxy system for the growth of epitaxial graphene on SiC
by: Mondal, S., et al.
Published: (2024)
by: Mondal, S., et al.
Published: (2024)
LAMBench: A Benchmark for Large Atomistic Models
by: Peng, Anyang, et al.
Published: (2025)
by: Peng, Anyang, et al.
Published: (2025)
Arsenic diffusion in MOVPE-Grown GaAs/Ge epitaxial structures
by: Orejuela, V., et al.
Published: (2024)
by: Orejuela, V., et al.
Published: (2024)
Influence of dislocations in multilayer graphene stacks: A phase field crystal study
by: Elder, K. R., et al.
Published: (2024)
by: Elder, K. R., et al.
Published: (2024)
Challenges in the Theory and Atomistic Simulation of Metal Electrodeposition
by: Chaudhuri, Shayantan, et al.
Published: (2024)
by: Chaudhuri, Shayantan, et al.
Published: (2024)
Etching of elemental layers in oxide molecular beam epitaxy by O2-assisted formation and evaporation of their volatile suboxide: The examples of Ga and Ge
by: Chen, Wenshan, et al.
Published: (2024)
by: Chen, Wenshan, et al.
Published: (2024)
Nudged elastic band calculations of stacking and dislocation pathways in diamond
by: Chi, Chunxia, et al.
Published: (2025)
by: Chi, Chunxia, et al.
Published: (2025)
Automated atomistic simulations of dissociated dislocations with ab initio accuracy
by: Mismetti, Laura, et al.
Published: (2023)
by: Mismetti, Laura, et al.
Published: (2023)
Solute diffusion calculation in Fe-Si and Fe-Cr-Si multicomponent alloys
by: Miryashkin, Timofei, et al.
Published: (2024)
by: Miryashkin, Timofei, et al.
Published: (2024)
Atomistic modelling of all dislocations and twins in HCP and BCC Ti
by: Wen, Tongqi, et al.
Published: (2022)
by: Wen, Tongqi, et al.
Published: (2022)
Beyond Independent Error Assumptions in Large GNN Atomistic Models
by: Ock, Janghoon, et al.
Published: (2023)
by: Ock, Janghoon, et al.
Published: (2023)
Atomistic Modelling of High-Entropy Layered Anodes and Their Electrolyte Interface
by: Bano, Amreen, et al.
Published: (2024)
by: Bano, Amreen, et al.
Published: (2024)
Nanoindentation of single crystalline Mo: Atomistic defect nucleation and thermomechanical stability
by: Domínguez-Gutiérrez, F. J., et al.
Published: (2021)
by: Domínguez-Gutiérrez, F. J., et al.
Published: (2021)
Machine-learning interatomic potential for AlN for epitaxial simulation
by: Taormina, Nicholas, et al.
Published: (2025)
by: Taormina, Nicholas, et al.
Published: (2025)
A systematic Investigation of Thermoelectric Properties of Monolayers of ZrX2N4(X = Si, Ge)
by: Das, Chayan, et al.
Published: (2024)
by: Das, Chayan, et al.
Published: (2024)
An FFT based approach to account for elastic interactions in OkMC: Application to dislocation loops in iron
by: Santos-Güemes, Rodrigo, et al.
Published: (2024)
by: Santos-Güemes, Rodrigo, et al.
Published: (2024)
Multiscale analysis of large twist ferroelectricity and swirling dislocations in bilayer hexagonal boron nitride
by: Ahmed, Md Tusher, et al.
Published: (2025)
by: Ahmed, Md Tusher, et al.
Published: (2025)
Towards controllable Si-doping in oxide molecular beam epitaxy using a solid SiO source: Application to $β$-Ga2O3
by: Ardenghi, A., et al.
Published: (2022)
by: Ardenghi, A., et al.
Published: (2022)
Thermal expansion and temperature dependence of Raman modes in epitaxial layers of Ge and Ge$_{1-x}$Sn$_{x}$
by: Corley-Wiciak, Agnieszka Anna, et al.
Published: (2024)
by: Corley-Wiciak, Agnieszka Anna, et al.
Published: (2024)
A multi-physics model for dislocation driven spontaneous grain nucleation and microstructure evolution in polycrystals
by: Tandogan, Izzet Tarik, et al.
Published: (2025)
by: Tandogan, Izzet Tarik, et al.
Published: (2025)
Direct evidence and atomic-scale mechanisms of reduced dislocation mobility in an inorganic semiconductor under illumination
by: Li, Mingqiang, et al.
Published: (2025)
by: Li, Mingqiang, et al.
Published: (2025)
Unbiased Atomistic Predictions of Crystal Dislocation Dynamics using Bayesian Force Fields
by: Owen, Cameron J., et al.
Published: (2024)
by: Owen, Cameron J., et al.
Published: (2024)
Hop-Decorate: An Automated Atomistic Workflow for Generating Defect Transport Data in Chemically Complex Materials
by: Hatton, Peter, et al.
Published: (2025)
by: Hatton, Peter, et al.
Published: (2025)
A reduced-temperature process for preparing atomically clean Si(100) and SiGe(100) surfaces with vapor HF
by: Peña, Luis Fabián, et al.
Published: (2025)
by: Peña, Luis Fabián, et al.
Published: (2025)
Ge epitaxy at ultra-low growth temperatures enabled by a pristine growth environment
by: Wilflingseder, Christoph, et al.
Published: (2024)
by: Wilflingseder, Christoph, et al.
Published: (2024)
Isotropic and anisotropic spin-dependent transport in epitaxial Fe$_3$Si
by: Soya, Nozomi, et al.
Published: (2025)
by: Soya, Nozomi, et al.
Published: (2025)
Are Foundational Atomistic Models Reliable for Finite-Temperature Molecular Dynamics?
by: Li, Denan, et al.
Published: (2025)
by: Li, Denan, et al.
Published: (2025)
In-situ study and modeling of the reaction kinetics during molecular beam epitaxy of GeO2 and its etching by Ge
by: Chen, Wenshan, et al.
Published: (2023)
by: Chen, Wenshan, et al.
Published: (2023)
Atomistic-Level Analysis of Nanoindentation-Induced Plasticity in Arc--Melted NiFeCrCo Alloys: The role of stacking faults
by: Dominguez-Gutierrez, F. J., et al.
Published: (2024)
by: Dominguez-Gutierrez, F. J., et al.
Published: (2024)
Structural and optical properties of self-assembled AlN nanowires grown on SiO2/Si substrates by molecular beam epitaxy
by: Gačević, Ž., et al.
Published: (2024)
by: Gačević, Ž., et al.
Published: (2024)
Electrical Characterization of hexagonal SiGe
by: Bollier, Isabelle, et al.
Published: (2025)
by: Bollier, Isabelle, et al.
Published: (2025)
Similar Items
-
3D lattice Monte Carlo modeling of morphology formation of Si/SiOx nanocomposites during phase separation of nonstoichiometric Si oxide films
by: Oliinyk, Ivan, et al.
Published: (2025) -
Quantitative analysis of the prediction performance of a Convolutional Neural Network evaluating the surface elastic energy of a strained film
by: Encinar, Luis Martín, et al.
Published: (2024) -
Ultra-thin strain-relieving Si$_{1-x}$Ge$_x$ layers enabling III-V epitaxy on Si
by: Smith, Trevor R., et al.
Published: (2024) -
First-principles calculation of scattering potentials of Si-Ge and Sn-Ge dimers on Ge(001) surfaces
by: Ono, Tomoya
Published: (2012) -
Si/SiGe multi-channel superlattice structure epitaxial growth with segmented temperature control for Next-Generation Logic Devices
by: Yao, Wenlong, et al.
Published: (2026)