Spin properties in droplet epitaxy-grown telecom quantum dots
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arXiv
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| Auteurs principaux: | , , , , , |
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| Format: | Preprint |
| Publié: |
2025
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| _version_ | 1866911302980468736 |
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| author | Cizauskas, Marius Sala, Elisa M. Heffernan, Jon Fox, A. Mark Bayer, Manfred Greilich, Alex |
| author_facet | Cizauskas, Marius Sala, Elisa M. Heffernan, Jon Fox, A. Mark Bayer, Manfred Greilich, Alex |
| contents | We investigate the spin properties of InAs/InGaAs/InP quantum dots grown by metalorganic vapor-phase epitaxy (MOVPE) deposition using droplet epitaxy, which emit in the telecom C-band. Using pump-probe Faraday ellipticity measurements, we determine electron and hole $g$-factors of $|g_e| = 0.934$ and $|g_h| = 0.471$, with the electron $g$-factor being nearly twice as low as typical molecular beam epitaxy Stranski-Krastanov (SK) grown samples. Most significantly, we measure a longitudinal spin relaxation time $T_1 = 2.95\,μs$, representing an order of magnitude improvement over comparable MBE SK grown samples. Despite significant electron $g$-factor anisotropy, we observed that it is reduced relative to similar material composition samples grown with MBE or MOVPE SK methods. We attribute these g-factor anisotropy and spin lifetime improvements to the enhanced structural symmetry achieved via MOVPE droplet epitaxy, which mitigates the inherent structural asymmetry in strain-driven growth approaches for InAs/InP quantum dots. These results demonstrate that MOVPE droplet epitaxy-grown InAs/InGaAs/InP quantum dots exhibit favorable spin properties for potential implementation in quantum information applications. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2507_06058 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Spin properties in droplet epitaxy-grown telecom quantum dots Cizauskas, Marius Sala, Elisa M. Heffernan, Jon Fox, A. Mark Bayer, Manfred Greilich, Alex Mesoscale and Nanoscale Physics We investigate the spin properties of InAs/InGaAs/InP quantum dots grown by metalorganic vapor-phase epitaxy (MOVPE) deposition using droplet epitaxy, which emit in the telecom C-band. Using pump-probe Faraday ellipticity measurements, we determine electron and hole $g$-factors of $|g_e| = 0.934$ and $|g_h| = 0.471$, with the electron $g$-factor being nearly twice as low as typical molecular beam epitaxy Stranski-Krastanov (SK) grown samples. Most significantly, we measure a longitudinal spin relaxation time $T_1 = 2.95\,μs$, representing an order of magnitude improvement over comparable MBE SK grown samples. Despite significant electron $g$-factor anisotropy, we observed that it is reduced relative to similar material composition samples grown with MBE or MOVPE SK methods. We attribute these g-factor anisotropy and spin lifetime improvements to the enhanced structural symmetry achieved via MOVPE droplet epitaxy, which mitigates the inherent structural asymmetry in strain-driven growth approaches for InAs/InP quantum dots. These results demonstrate that MOVPE droplet epitaxy-grown InAs/InGaAs/InP quantum dots exhibit favorable spin properties for potential implementation in quantum information applications. |
| title | Spin properties in droplet epitaxy-grown telecom quantum dots |
| topic | Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2507.06058 |