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Main Authors: Yu, Qiang, Saidov, Khakimjon, Erofeev, Ivan, Hassebi, Khalil, Wei, Chen, Renard, Charles, Vincent, Laetitia, Glas, Frank, Mirsaidov, Utkur, Panciera, Federico
Format: Preprint
Published: 2025
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Online Access:https://arxiv.org/abs/2507.06699
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author Yu, Qiang
Saidov, Khakimjon
Erofeev, Ivan
Hassebi, Khalil
Wei, Chen
Renard, Charles
Vincent, Laetitia
Glas, Frank
Mirsaidov, Utkur
Panciera, Federico
author_facet Yu, Qiang
Saidov, Khakimjon
Erofeev, Ivan
Hassebi, Khalil
Wei, Chen
Renard, Charles
Vincent, Laetitia
Glas, Frank
Mirsaidov, Utkur
Panciera, Federico
contents The occurrence of several crystal phases within nanostructures of a single material presents both challenges and opportunities. While unintended phase mixing can degrade optoelectronic performances, deliberate control of polytypism enables novel heterostructures with unique quantum properties, crystal phase quantum dots (CPQDs). However, since tailoring the formation of CPQDs is difficult, applications remain scarce. Here, we demonstrate electric-field-driven crystal phase switching in GaAs nanowires during vapor-liquid-solid growth, enabling precise control of crystal phases and creations of CPQDs with monolayer precision. Nanowires are epitaxially grown on custom-made silicon micro-substrates using chemical vapor deposition within an in-situ TEM. Real-time imaging reveals that the electric field switches instantaneously the crystal phase between zinc blende and wurtzite, creating atomically sharp interfaces. Numerical simulations are developed to investigate the impact of the electric field on the catalyst droplet geometry, which largely governs the crystal phase. This constitutes a key progress towards unlocking the potential of CPQDs.
format Preprint
id arxiv_https___arxiv_org_abs_2507_06699
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle Electric-field-assisted phase switching for crystal phase quantum dot fabrication in GaAs nanowires
Yu, Qiang
Saidov, Khakimjon
Erofeev, Ivan
Hassebi, Khalil
Wei, Chen
Renard, Charles
Vincent, Laetitia
Glas, Frank
Mirsaidov, Utkur
Panciera, Federico
Materials Science
Mesoscale and Nanoscale Physics
Other Condensed Matter
Applied Physics
The occurrence of several crystal phases within nanostructures of a single material presents both challenges and opportunities. While unintended phase mixing can degrade optoelectronic performances, deliberate control of polytypism enables novel heterostructures with unique quantum properties, crystal phase quantum dots (CPQDs). However, since tailoring the formation of CPQDs is difficult, applications remain scarce. Here, we demonstrate electric-field-driven crystal phase switching in GaAs nanowires during vapor-liquid-solid growth, enabling precise control of crystal phases and creations of CPQDs with monolayer precision. Nanowires are epitaxially grown on custom-made silicon micro-substrates using chemical vapor deposition within an in-situ TEM. Real-time imaging reveals that the electric field switches instantaneously the crystal phase between zinc blende and wurtzite, creating atomically sharp interfaces. Numerical simulations are developed to investigate the impact of the electric field on the catalyst droplet geometry, which largely governs the crystal phase. This constitutes a key progress towards unlocking the potential of CPQDs.
title Electric-field-assisted phase switching for crystal phase quantum dot fabrication in GaAs nanowires
topic Materials Science
Mesoscale and Nanoscale Physics
Other Condensed Matter
Applied Physics
url https://arxiv.org/abs/2507.06699