3D Atomic-Scale Metrology of Strain Relaxation and Roughness in Gate-All-Around (GAA) Transistors via Electron Ptychography

Fuente: arXiv

Saved in:

Bibliographic Details
Main Authors:	Karapetyan, Shake, Zeltmann, Steven E., Wilk, Glen, Chen, Ta-Kun, Hou, Vincent D. -H., Muller, David A.
Format:	Preprint
Published:	2025
Subjects:	Materials Science Applied Physics
Online Access:	Acceder al recurso
Tags:	Add Tag No Tags, Be the first to tag this record!

Internet

https://arxiv.org/abs/2507.07265