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3D Atomic-Scale Metrology of Strain Relaxation and Roughness in Gate-All-Around (GAA) Transistors via Electron Ptychography

Fuente: arXiv

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Bibliographic Details
Main Authors:	Karapetyan, Shake, Zeltmann, Steven E., Wilk, Glen, Chen, Ta-Kun, Hou, Vincent D. -H., Muller, David A.
Format:	Preprint
Published:	2025
Subjects:	Materials Science Applied Physics
Online Access:	Acceder al recurso
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