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Graphene Heterostructure-Based Non-Volatile Memory Devices with Top Floating Gate Programming

Fuente: arXiv

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Détails bibliographiques
Auteurs principaux:	Rodrigues, Gabriel L., Yoshida, Ana B., Selmi, Guilherme S., de Jesus, Nickolas T. K. B, Ricardo, Igor, Watanabe, Kenji, Taniguchi, Takashi, de Oliveira, Rafael F., Lopez-Richard, Victor, Cadore, Alisson R.
Format:	Preprint
Publié:	2025
Sujets:	Applied Physics Mesoscale and Nanoscale Physics
Accès en ligne:	Acceder al recurso
Tags:	Ajouter un tag Pas de tags, Soyez le premier à ajouter un tag!

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