$WSe_2$ Monolayers Grown by Molecular Beam Epitaxy on hBN
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arXiv
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| Autori principali: | , , , , , , , , , , , |
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| Natura: | Preprint |
| Pubblicazione: |
2025
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| _version_ | 1866908852369227776 |
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| author | Kucharek, Julia Raczyński, Mateusz Bożek, Rafał Kaleta, Anna Kurowska, Bogusława Bilska, Marta Kret, Sławomir Taniguchi, Takashi Watanabe, Kenji Kossacki, Piotr Goryca, Mateusz Pacuski, Wojciech |
| author_facet | Kucharek, Julia Raczyński, Mateusz Bożek, Rafał Kaleta, Anna Kurowska, Bogusława Bilska, Marta Kret, Sławomir Taniguchi, Takashi Watanabe, Kenji Kossacki, Piotr Goryca, Mateusz Pacuski, Wojciech |
| contents | A three-step process was developed for growing high-quality, optically uniform WSe2 monolayers by molecular beam epitaxy (MBE) with advantage of using hexagonal boron nitride (hBN). The process was optimized to maximize the efficiency of photoluminescence and promote formation of hexagonal WSe2 domains. Atomic force microscopy (AFM) was employed to estimate the dispersion of WSe2 hexagonal domains orientation. Monolayer character of the film was identified using optical methods and verified with high-resolution transmission electron microscopy (TEM) cross-section. Temperature-and-magnetic-field-dependent studies revealed the behaviour of exciton complexes to be analogical to that of exfoliated counterparts. Direct growth on hBN combined with uniform optical response proves this WSe2 superior to mechanically exfoliated WSe2 in terms of convenience of use and reproducibility. Provided results establish a significant progress in optical quality of epitaxially grown transition metal dichalcogenides (TMDs) monolayers and fabrication of large-scale functional devices. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2507_09275 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | $WSe_2$ Monolayers Grown by Molecular Beam Epitaxy on hBN Kucharek, Julia Raczyński, Mateusz Bożek, Rafał Kaleta, Anna Kurowska, Bogusława Bilska, Marta Kret, Sławomir Taniguchi, Takashi Watanabe, Kenji Kossacki, Piotr Goryca, Mateusz Pacuski, Wojciech Materials Science A three-step process was developed for growing high-quality, optically uniform WSe2 monolayers by molecular beam epitaxy (MBE) with advantage of using hexagonal boron nitride (hBN). The process was optimized to maximize the efficiency of photoluminescence and promote formation of hexagonal WSe2 domains. Atomic force microscopy (AFM) was employed to estimate the dispersion of WSe2 hexagonal domains orientation. Monolayer character of the film was identified using optical methods and verified with high-resolution transmission electron microscopy (TEM) cross-section. Temperature-and-magnetic-field-dependent studies revealed the behaviour of exciton complexes to be analogical to that of exfoliated counterparts. Direct growth on hBN combined with uniform optical response proves this WSe2 superior to mechanically exfoliated WSe2 in terms of convenience of use and reproducibility. Provided results establish a significant progress in optical quality of epitaxially grown transition metal dichalcogenides (TMDs) monolayers and fabrication of large-scale functional devices. |
| title | $WSe_2$ Monolayers Grown by Molecular Beam Epitaxy on hBN |
| topic | Materials Science |
| url | https://arxiv.org/abs/2507.09275 |