Impedance-Engineered Josephson Parametric Amplifier with Single-Step Lithography
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| Main Authors: | , , , , |
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| Format: | Preprint |
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2025
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| _version_ | 1866909945021071360 |
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| author | Patel, Lipi Hawaldar, Samarth Panikkar, Aditya Shankar, Athreya Suri, Baladitya |
| author_facet | Patel, Lipi Hawaldar, Samarth Panikkar, Aditya Shankar, Athreya Suri, Baladitya |
| contents | We present the experimental demonstration of an impedance-engineered Josephson parametric amplifier (IEJPA) fabricated in a single-step lithography process. Impedance engineering is implemented using a lumped-element series LC circuit. We use a simpler lithography process where the entire device -- impedance transformer and JPA -- are patterned in a single electron beam lithography step, followed by a double-angle Dolan bridge technique for Al-AlO$_x$-Al deposition. We observe amplification with 18 dB gain over a wide $400\,$MHz bandwidth centered around $5.3$GHz with added noise approaching the quantum limit, and a saturation power of $-114$dBm. To accurately explain our experimental results, we extend existing theories for impedance-engineered JPAs to incorporate the full sine nonlinearity of both the JPA and the transformer. Our work shows a path to simpler realization of broadband JPAs and provides a theoretical foundation for a regime of JPA operation that has been less explored in literature. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2507_09298 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Impedance-Engineered Josephson Parametric Amplifier with Single-Step Lithography Patel, Lipi Hawaldar, Samarth Panikkar, Aditya Shankar, Athreya Suri, Baladitya Quantum Physics We present the experimental demonstration of an impedance-engineered Josephson parametric amplifier (IEJPA) fabricated in a single-step lithography process. Impedance engineering is implemented using a lumped-element series LC circuit. We use a simpler lithography process where the entire device -- impedance transformer and JPA -- are patterned in a single electron beam lithography step, followed by a double-angle Dolan bridge technique for Al-AlO$_x$-Al deposition. We observe amplification with 18 dB gain over a wide $400\,$MHz bandwidth centered around $5.3$GHz with added noise approaching the quantum limit, and a saturation power of $-114$dBm. To accurately explain our experimental results, we extend existing theories for impedance-engineered JPAs to incorporate the full sine nonlinearity of both the JPA and the transformer. Our work shows a path to simpler realization of broadband JPAs and provides a theoretical foundation for a regime of JPA operation that has been less explored in literature. |
| title | Impedance-Engineered Josephson Parametric Amplifier with Single-Step Lithography |
| topic | Quantum Physics |
| url | https://arxiv.org/abs/2507.09298 |