Field-effect transistors based on charged domain walls in van der Waals ferroelectric α-In$_2$Se$_3$

Fuente: arXiv

Saved in:

Bibliographic Details
Main Authors:	Nahid, Shahriar Muhammad, Dong, Haiyue, Nolan, Gillian, Schleife, Andre, Nam, SungWoo, Huang, Pinshane Y., Mason, Nadya, van der Zande, Arend M.
Format:	Preprint
Published:	2025
Subjects:	Materials Science
Online Access:	Acceder al recurso
Tags:	Add Tag No Tags, Be the first to tag this record!

Internet

https://arxiv.org/abs/2507.09838