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Field-effect transistors based on charged domain walls in van der Waals ferroelectric α-In$_2$Se$_3$

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Bibliographic Details
Main Authors:	Nahid, Shahriar Muhammad, Dong, Haiyue, Nolan, Gillian, Schleife, Andre, Nam, SungWoo, Huang, Pinshane Y., Mason, Nadya, van der Zande, Arend M.
Format:	Preprint
Published:	2025
Subjects:	Materials Science
Online Access:	Acceder al recurso
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