Heterogeneous integration of silicon nitride and amorphous silicon carbide photonics
Fuente:
arXiv
Enregistré dans:
| Auteurs principaux: | , , , , , , , , , , , , |
|---|---|
| Format: | Preprint |
| Publié: |
2025
|
| Sujets: | |
| Accès en ligne: | |
| Tags: |
Ajouter un tag
Pas de tags, Soyez le premier à ajouter un tag!
|
| _version_ | 1866908448945340416 |
|---|---|
| author | Li, Zizheng Lopez-Rodriguez, Bruno Sharma, Naresh van der Kolk, Roald Scholte, Thomas Smedes, Harmen Erdogan, R. Tufan Chang, Jin Voncken, Hugo Gao, Jun Elshaari, Ali W Gröblacher, Simon Zadeh, Iman Esmaeil |
| author_facet | Li, Zizheng Lopez-Rodriguez, Bruno Sharma, Naresh van der Kolk, Roald Scholte, Thomas Smedes, Harmen Erdogan, R. Tufan Chang, Jin Voncken, Hugo Gao, Jun Elshaari, Ali W Gröblacher, Simon Zadeh, Iman Esmaeil |
| contents | Amorphous silicon carbide (a-SiC) has emerged as a compelling candidate for applications in integrated photonics, known for its high refractive index, high optical quality, high thermo-optic coefficient, and strong third-order nonlinearities. Furthermore, a-SiC can be easily deposited via CMOS-compatible chemical vapor deposition (CVD) techniques, allowing for precise thickness control and adjustable material properties on arbitrary substrates. Silicon nitride (SiN) is an industrial well-established and well-matured platform, which exhibits ultra-low propagation loss, but it is suboptimal for high-density reconfigurable photonics due to the large minimum bending radius and constrained tunability. In this work, we monolithically combine a-SiC with SiN photonics, leveraging the merits of both platforms, and achieve the a-SiC/SiN heterogeneous integration with an on-chip interconnection loss of 0.32$\pm$0.10 dB, and integration density increment exceeding 4,444-fold. By implementing active devices on a-SiC, we achieve 27 times higher thermo-optic tuning efficiency, with respect to the SiN photonic platform. In addition, the a-SiC/SiN platform gives the flexibility to choose the optimal fiber-to-chip coupling strategy depending on the interfacing platform, with efficient side-coupling on SiN and grating-coupling on a-SiC platform. The proposed a-SiC/SiN photonic platform can foster versatile applications in programmable and quantum photonics, nonlinear optics, and beyond. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2507_10312 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Heterogeneous integration of silicon nitride and amorphous silicon carbide photonics Li, Zizheng Lopez-Rodriguez, Bruno Sharma, Naresh van der Kolk, Roald Scholte, Thomas Smedes, Harmen Erdogan, R. Tufan Chang, Jin Voncken, Hugo Gao, Jun Elshaari, Ali W Gröblacher, Simon Zadeh, Iman Esmaeil Optics Applied Physics Amorphous silicon carbide (a-SiC) has emerged as a compelling candidate for applications in integrated photonics, known for its high refractive index, high optical quality, high thermo-optic coefficient, and strong third-order nonlinearities. Furthermore, a-SiC can be easily deposited via CMOS-compatible chemical vapor deposition (CVD) techniques, allowing for precise thickness control and adjustable material properties on arbitrary substrates. Silicon nitride (SiN) is an industrial well-established and well-matured platform, which exhibits ultra-low propagation loss, but it is suboptimal for high-density reconfigurable photonics due to the large minimum bending radius and constrained tunability. In this work, we monolithically combine a-SiC with SiN photonics, leveraging the merits of both platforms, and achieve the a-SiC/SiN heterogeneous integration with an on-chip interconnection loss of 0.32$\pm$0.10 dB, and integration density increment exceeding 4,444-fold. By implementing active devices on a-SiC, we achieve 27 times higher thermo-optic tuning efficiency, with respect to the SiN photonic platform. In addition, the a-SiC/SiN platform gives the flexibility to choose the optimal fiber-to-chip coupling strategy depending on the interfacing platform, with efficient side-coupling on SiN and grating-coupling on a-SiC platform. The proposed a-SiC/SiN photonic platform can foster versatile applications in programmable and quantum photonics, nonlinear optics, and beyond. |
| title | Heterogeneous integration of silicon nitride and amorphous silicon carbide photonics |
| topic | Optics Applied Physics |
| url | https://arxiv.org/abs/2507.10312 |