Spin ordering-induced fully-compensated ferrimagnetism
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arXiv
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| Hauptverfasser: | , , |
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| Format: | Preprint |
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2025
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| _version_ | 1866916843878350848 |
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| author | Guo, San-Dong Chen, Shaobo Wang, Guangzhao |
| author_facet | Guo, San-Dong Chen, Shaobo Wang, Guangzhao |
| contents | Fully-compensated ferrimagnets exhibit zero net magnetic moment yet display non-relativistic global spin splitting, making them highly advantageous for constructing high-performance spintronic devices. The general strategy is to break the inversion symmetry of conventional antiferromagnets or the rotational/mirror symmetry of altermagnets to achieve fully-compensated ferrimagnets. Here, we propose to induce fully-compensated ferrimagnetism by engineering the spin ordering rather than modifying the lattice structure. Bilayer stacking engineering offers a convenient platform to verify our proposal and readily enables switching between two distinct electronic states by tuning the $\mathrm{N\acute{e}el}$ vector of one layer. By the first-principles calculations, a bilayer system is constructed with monolayer $\mathrm{Cr_2C_2S_6}$ as the elementary building block to corroborate our proposal. This strategy can also be extended to inducing altermagnetism via spin ordering engineering. Our work offers an alternative route to realize non-relativistic spin splitting in zero-net-magnetization magnets, paving the way for the advancement and construction of low-power spintronic device. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2507_10848 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Spin ordering-induced fully-compensated ferrimagnetism Guo, San-Dong Chen, Shaobo Wang, Guangzhao Materials Science Fully-compensated ferrimagnets exhibit zero net magnetic moment yet display non-relativistic global spin splitting, making them highly advantageous for constructing high-performance spintronic devices. The general strategy is to break the inversion symmetry of conventional antiferromagnets or the rotational/mirror symmetry of altermagnets to achieve fully-compensated ferrimagnets. Here, we propose to induce fully-compensated ferrimagnetism by engineering the spin ordering rather than modifying the lattice structure. Bilayer stacking engineering offers a convenient platform to verify our proposal and readily enables switching between two distinct electronic states by tuning the $\mathrm{N\acute{e}el}$ vector of one layer. By the first-principles calculations, a bilayer system is constructed with monolayer $\mathrm{Cr_2C_2S_6}$ as the elementary building block to corroborate our proposal. This strategy can also be extended to inducing altermagnetism via spin ordering engineering. Our work offers an alternative route to realize non-relativistic spin splitting in zero-net-magnetization magnets, paving the way for the advancement and construction of low-power spintronic device. |
| title | Spin ordering-induced fully-compensated ferrimagnetism |
| topic | Materials Science |
| url | https://arxiv.org/abs/2507.10848 |