Programmable Quantum Anomalous Hall Insulator in Twisted Crystalline Flatbands

Fuente: arXiv
Saved in:
Bibliographic Details
Main Authors: Wang, Wenxuan, Wang, Yijie, Zhang, Zaizhe, Huo, Zihao, Zhou, Gengdong, Watanabe, Kenji, Taniguchi, Takashi, Xie, X. C., Liu, Kaihui, Song, Zhida, Lu, Xiaobo
Format: Preprint
Published: 2025
Subjects:
Online Access:
Tags: Add Tag
No Tags, Be the first to tag this record!
_version_ 1866914237031383040
author Wang, Wenxuan
Wang, Yijie
Zhang, Zaizhe
Huo, Zihao
Zhou, Gengdong
Watanabe, Kenji
Taniguchi, Takashi
Xie, X. C.
Liu, Kaihui
Song, Zhida
Lu, Xiaobo
author_facet Wang, Wenxuan
Wang, Yijie
Zhang, Zaizhe
Huo, Zihao
Zhou, Gengdong
Watanabe, Kenji
Taniguchi, Takashi
Xie, X. C.
Liu, Kaihui
Song, Zhida
Lu, Xiaobo
contents The isospin flavors in condensed matters can be continuously broken, forming various symmetry-broken quantum states. In moiré crystals, the competition between different isospin configurations can be effectively tuned by the twist angles and staciking orders. Here we report twisted double rhombohedral-trilayer-gaphene as a new twisted crystalline flatbands system showing rich moiré dependent topological phenomena. In devices with small twist angles, programmable Chern insulators with Chern number C = 3 at integer moiré filling v = 1 have been observed. We have further revealed an exotic hidden order which can quench the Chern insulator as well as multiple first-order transitions between different symmetry-broken phases. Interestly, in the device with a slightly larger twist angle, multiple Chern insulators with C = 1 at fractional moiré fillings including v = 1/4, 1/3 and 1/2 have been observed, whereas the Chern insulator at v = 1 is abscent. Our study demonstrated the twisted flatbands form rhombohedral-multilayer-graphene as a new platform to study tunable high Chern insulators as well as new devices for quantum storage and computation.
format Preprint
id arxiv_https___arxiv_org_abs_2507_10875
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle Programmable Quantum Anomalous Hall Insulator in Twisted Crystalline Flatbands
Wang, Wenxuan
Wang, Yijie
Zhang, Zaizhe
Huo, Zihao
Zhou, Gengdong
Watanabe, Kenji
Taniguchi, Takashi
Xie, X. C.
Liu, Kaihui
Song, Zhida
Lu, Xiaobo
Mesoscale and Nanoscale Physics
Strongly Correlated Electrons
The isospin flavors in condensed matters can be continuously broken, forming various symmetry-broken quantum states. In moiré crystals, the competition between different isospin configurations can be effectively tuned by the twist angles and staciking orders. Here we report twisted double rhombohedral-trilayer-gaphene as a new twisted crystalline flatbands system showing rich moiré dependent topological phenomena. In devices with small twist angles, programmable Chern insulators with Chern number C = 3 at integer moiré filling v = 1 have been observed. We have further revealed an exotic hidden order which can quench the Chern insulator as well as multiple first-order transitions between different symmetry-broken phases. Interestly, in the device with a slightly larger twist angle, multiple Chern insulators with C = 1 at fractional moiré fillings including v = 1/4, 1/3 and 1/2 have been observed, whereas the Chern insulator at v = 1 is abscent. Our study demonstrated the twisted flatbands form rhombohedral-multilayer-graphene as a new platform to study tunable high Chern insulators as well as new devices for quantum storage and computation.
title Programmable Quantum Anomalous Hall Insulator in Twisted Crystalline Flatbands
topic Mesoscale and Nanoscale Physics
Strongly Correlated Electrons
url https://arxiv.org/abs/2507.10875