Silicon nitride on-chip C-band spontaneous emission generation based on lanthanide doped microparticles
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arXiv
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| Main Authors: | , , , , , , , |
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| Format: | Preprint |
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2025
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| _version_ | 1866910039766204416 |
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| author | Obydennov, Dmitry V. Asharchuk, Ilya M. Mumlyakov, Alexander M. Shibalov, Maxim V. Vovk, Nikolay A. Filippov, Ivan A. Volkova, Lidiya S. Tarkhov, Michael A. |
| author_facet | Obydennov, Dmitry V. Asharchuk, Ilya M. Mumlyakov, Alexander M. Shibalov, Maxim V. Vovk, Nikolay A. Filippov, Ivan A. Volkova, Lidiya S. Tarkhov, Michael A. |
| contents | The integration of active light-emitting elements into planar photonic circuits on a silicon nitride platform remains challenging due to material incompatibilities and high-temperature processing. Proposed hybrid method embeds monodisperse luminescent particles into lithographically defined wells above a 200 nm-thick silicon nitride taper coupler. A fabrication process involving wells etching, particle deposition, and planarization enables precise integration while maintaining waveguide integrity. When pumped at 950 nm with a diode laser, the device emits broadband radiation in the 1500-1600 nm range, covering the optical telecommunication C-band. Numerical simulations yield an average coupling efficiency of 0.25% into the fundamental waveguide mode, suggesting significant potential for further device optimization. The approach provides a scalable route for integrating broadband telecommunications emitters on a silicon nitride platform. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2507_11189 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Silicon nitride on-chip C-band spontaneous emission generation based on lanthanide doped microparticles Obydennov, Dmitry V. Asharchuk, Ilya M. Mumlyakov, Alexander M. Shibalov, Maxim V. Vovk, Nikolay A. Filippov, Ivan A. Volkova, Lidiya S. Tarkhov, Michael A. Optics Applied Physics The integration of active light-emitting elements into planar photonic circuits on a silicon nitride platform remains challenging due to material incompatibilities and high-temperature processing. Proposed hybrid method embeds monodisperse luminescent particles into lithographically defined wells above a 200 nm-thick silicon nitride taper coupler. A fabrication process involving wells etching, particle deposition, and planarization enables precise integration while maintaining waveguide integrity. When pumped at 950 nm with a diode laser, the device emits broadband radiation in the 1500-1600 nm range, covering the optical telecommunication C-band. Numerical simulations yield an average coupling efficiency of 0.25% into the fundamental waveguide mode, suggesting significant potential for further device optimization. The approach provides a scalable route for integrating broadband telecommunications emitters on a silicon nitride platform. |
| title | Silicon nitride on-chip C-band spontaneous emission generation based on lanthanide doped microparticles |
| topic | Optics Applied Physics |
| url | https://arxiv.org/abs/2507.11189 |