Diverse high-Chern-number quantum anomalous Hall insulators in twisted rhombohedral graphene
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arXiv
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| Main Authors: | , , , , , , , , , , , , , |
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| Format: | Preprint |
| Published: |
2025
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| _version_ | 1866915391084691456 |
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| author | Liu, Naitian Chen, Zhangyuan Ding, Jing Zhou, Wenqiang Xiang, Hanxiao Fang, Xinjie Wu, Linfeng Zhan, Xiaowan Zhang, Le Chen, Qianmei Watanabe, Kenji Taniguchi, Takashi Xin, Na Xu, Shuigang |
| author_facet | Liu, Naitian Chen, Zhangyuan Ding, Jing Zhou, Wenqiang Xiang, Hanxiao Fang, Xinjie Wu, Linfeng Zhan, Xiaowan Zhang, Le Chen, Qianmei Watanabe, Kenji Taniguchi, Takashi Xin, Na Xu, Shuigang |
| contents | Quantum anomalous Hall (QAH) insulators with high Chern number (C) enables multiple dissipationless edge channels for low-power-consumption electronics. We report the realization of multiple high-C QAH insulators including C=3,5,6, and 7 in twisted monolayer-rhombohedral pentalayer graphene. In twist angles of approximately 1.40°, we observe QAH effect with C=5 at a filling of one electron per moiré unit cell, persisting up to 2 Kelvin. Furthermore, incommensurate QAH insulators with C=5,6, and 7 emerge at partial fillings. In twist angles of 0.89°, Chern insulators with C=3 and C=6 appear at fillings of two and three electrons, respectively. Our findings establish twisted rhombohedral multilayer graphene as a highly tunable platform for multichannel, dissipationless electronics and for the exploration of exotic quantum Hall states beyond traditional Landau level paradigm. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2507_11347 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Diverse high-Chern-number quantum anomalous Hall insulators in twisted rhombohedral graphene Liu, Naitian Chen, Zhangyuan Ding, Jing Zhou, Wenqiang Xiang, Hanxiao Fang, Xinjie Wu, Linfeng Zhan, Xiaowan Zhang, Le Chen, Qianmei Watanabe, Kenji Taniguchi, Takashi Xin, Na Xu, Shuigang Mesoscale and Nanoscale Physics Materials Science Strongly Correlated Electrons Quantum anomalous Hall (QAH) insulators with high Chern number (C) enables multiple dissipationless edge channels for low-power-consumption electronics. We report the realization of multiple high-C QAH insulators including C=3,5,6, and 7 in twisted monolayer-rhombohedral pentalayer graphene. In twist angles of approximately 1.40°, we observe QAH effect with C=5 at a filling of one electron per moiré unit cell, persisting up to 2 Kelvin. Furthermore, incommensurate QAH insulators with C=5,6, and 7 emerge at partial fillings. In twist angles of 0.89°, Chern insulators with C=3 and C=6 appear at fillings of two and three electrons, respectively. Our findings establish twisted rhombohedral multilayer graphene as a highly tunable platform for multichannel, dissipationless electronics and for the exploration of exotic quantum Hall states beyond traditional Landau level paradigm. |
| title | Diverse high-Chern-number quantum anomalous Hall insulators in twisted rhombohedral graphene |
| topic | Mesoscale and Nanoscale Physics Materials Science Strongly Correlated Electrons |
| url | https://arxiv.org/abs/2507.11347 |