Mobility Extraction and Analysis of GaN HEMTs for RF Applications Using TCAD and Experimental Data
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arXiv
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| Format: | Preprint |
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2025
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| _version_ | 1866912484859838464 |
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| author | Rahman, Tanjim |
| author_facet | Rahman, Tanjim |
| contents | This paper presents an analysis of GaN high-electron-mobility transistors (HEMTs) using both TCAD simulation and experimental characterization. The energy band structure was studied using Nextnano simulation software to observe two-dimensional electron gas (2DEG) formation and carrier confinement under equilibrium conditions. Additionally, I-V and C-V data from fabricated research-grade GaN HEMTs were analyzed to extract key electrical parameters. The device demonstrated an ON current of 1.9 mA and an OFF current of 0.01 mA, indicating a strong ON/OFF current ratio. A subthreshold swing of 80 mV/decade and a DIBL of 5 mV/V were observed, confirming good gate control and short-channel suppression. The ON-resistance was 22.72 ohm per micron, with a saturation voltage of 1 V . The peak transconductance was extracted as 0.18 mS in the linear region and 0.5 mS in saturation. Field-effect mobility was calculated using the transconductance method, with a maximum value of approximately 1200 cm2/V.s at low drain bias. The combined simulation and experimental approach provided comprehensive insight into GaN HEMT behavior, enabling a deeper understanding of structure-performance relationships critical to advanced transistor design. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2507_11849 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Mobility Extraction and Analysis of GaN HEMTs for RF Applications Using TCAD and Experimental Data Rahman, Tanjim Systems and Control This paper presents an analysis of GaN high-electron-mobility transistors (HEMTs) using both TCAD simulation and experimental characterization. The energy band structure was studied using Nextnano simulation software to observe two-dimensional electron gas (2DEG) formation and carrier confinement under equilibrium conditions. Additionally, I-V and C-V data from fabricated research-grade GaN HEMTs were analyzed to extract key electrical parameters. The device demonstrated an ON current of 1.9 mA and an OFF current of 0.01 mA, indicating a strong ON/OFF current ratio. A subthreshold swing of 80 mV/decade and a DIBL of 5 mV/V were observed, confirming good gate control and short-channel suppression. The ON-resistance was 22.72 ohm per micron, with a saturation voltage of 1 V . The peak transconductance was extracted as 0.18 mS in the linear region and 0.5 mS in saturation. Field-effect mobility was calculated using the transconductance method, with a maximum value of approximately 1200 cm2/V.s at low drain bias. The combined simulation and experimental approach provided comprehensive insight into GaN HEMT behavior, enabling a deeper understanding of structure-performance relationships critical to advanced transistor design. |
| title | Mobility Extraction and Analysis of GaN HEMTs for RF Applications Using TCAD and Experimental Data |
| topic | Systems and Control |
| url | https://arxiv.org/abs/2507.11849 |