The study of 4H-SiC LGAD after proton radiation
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arXiv
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| Main Authors: | , , , , , , , , , |
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| Format: | Preprint |
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2025
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| _version_ | 1866913944640159744 |
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| author | Zhao, Sen Zhou, Jiaqi Fu, Chenxi Wang, Congcong Xiao, Suyu Zou, Xinbo Qv, Haolan Chen, Jiaxiang Zhang, Xiyuan Shi, Xin |
| author_facet | Zhao, Sen Zhou, Jiaqi Fu, Chenxi Wang, Congcong Xiao, Suyu Zou, Xinbo Qv, Haolan Chen, Jiaxiang Zhang, Xiyuan Shi, Xin |
| contents | Silicon carbide (SiC) is a promising material for radiation monitoring in harsh environments, due to its low dark current, high breakdown voltage, high thermal conductivity, and radiation hardness.~This work investigates a SiC-based Low-Gain Avalanche Detector (LGAD), named SICAR, with a gain factor of~2 to 3, under 80 MeV proton irradiation up to $1\times 10^{14}$~$n_{eq}/cm^{2}$. Electrical characterization via I-V, C-V, and $α$ particle injection reveals an increase in threshold voltage and a 2 to 4 order of magnitude reduction in leakage current, while charge collection efficiency decreases by about 50\%. X-ray diffraction (XRD) and capacitance deep-level transient spectroscopy (C-DLTS) were employed to characterize the lattice structure and deep-level defects before and after irradiation. Deep-level defect characteristics were integrated into TCAD simulations to develop an electrical degradation model for SiC LGADs. A linear defect-flux relationship is established in the model, showing agreement with experimental results. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2507_12238 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | The study of 4H-SiC LGAD after proton radiation Zhao, Sen Zhou, Jiaqi Fu, Chenxi Wang, Congcong Xiao, Suyu Zou, Xinbo Qv, Haolan Chen, Jiaxiang Zhang, Xiyuan Shi, Xin Instrumentation and Detectors High Energy Physics - Experiment Silicon carbide (SiC) is a promising material for radiation monitoring in harsh environments, due to its low dark current, high breakdown voltage, high thermal conductivity, and radiation hardness.~This work investigates a SiC-based Low-Gain Avalanche Detector (LGAD), named SICAR, with a gain factor of~2 to 3, under 80 MeV proton irradiation up to $1\times 10^{14}$~$n_{eq}/cm^{2}$. Electrical characterization via I-V, C-V, and $α$ particle injection reveals an increase in threshold voltage and a 2 to 4 order of magnitude reduction in leakage current, while charge collection efficiency decreases by about 50\%. X-ray diffraction (XRD) and capacitance deep-level transient spectroscopy (C-DLTS) were employed to characterize the lattice structure and deep-level defects before and after irradiation. Deep-level defect characteristics were integrated into TCAD simulations to develop an electrical degradation model for SiC LGADs. A linear defect-flux relationship is established in the model, showing agreement with experimental results. |
| title | The study of 4H-SiC LGAD after proton radiation |
| topic | Instrumentation and Detectors High Energy Physics - Experiment |
| url | https://arxiv.org/abs/2507.12238 |