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| Main Authors: | , , , , , , , , , , |
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| Format: | Preprint |
| Published: |
2025
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| Subjects: | |
| Online Access: | https://arxiv.org/abs/2507.12353 |
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| _version_ | 1866913993581395968 |
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| author | Chiang, Tony Plombon, John J. Lenox, Megan K. Mercer, Ian Debashis, Punyashloka DC, Mahendra Trolier-McKinstry, Susan Maria, Jon-Paul Ihlefeld, Jon F. Young, Ian A. Heron, John T. |
| author_facet | Chiang, Tony Plombon, John J. Lenox, Megan K. Mercer, Ian Debashis, Punyashloka DC, Mahendra Trolier-McKinstry, Susan Maria, Jon-Paul Ihlefeld, Jon F. Young, Ian A. Heron, John T. |
| contents | The ferroelectric switching speed has been experimentally obfuscated by the interaction between the measurement circuit and the ferroelectric switching itself. This has prohibited the observation of real material responses at nanosecond timescales and lower. Here, fundamental polarization switching speeds in ferroelectric materials with the perovskite, fluorite, and wurtzite structures are reported. Upon lateral scaling of island capacitors from micron to nanoscales, a clear transition from circuit-limited switching to a material-limited switching regime is observed. In La$_{0.15}$Bi$_{0.85}$FeO$_{3}$ capacitors, switching is as fast as ~150 ps, the fastest switching time reported. For polycrystalline Hf$_{0.5}$Zr$_{0.5}$O$_{2}$ capacitors, a fundamental switching limit of ~210 ps is observed. Switching times for Al$_{0.92}$B$_{0.08}$N are near 20 ns, limited by the coercive and breakdown electric fields. The activation field, instantaneous pseudo-resistivity, and energy-delay are reported in this material-limited regime. Lastly, a criterion for reaching the material-limited regime is provided. This regime enables observation of intrinsic material properties and favorable scaling trends for high-performance computing. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2507_12353 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Material-Limited Switching in Nanoscale Ferroelectrics Chiang, Tony Plombon, John J. Lenox, Megan K. Mercer, Ian Debashis, Punyashloka DC, Mahendra Trolier-McKinstry, Susan Maria, Jon-Paul Ihlefeld, Jon F. Young, Ian A. Heron, John T. Materials Science Applied Physics The ferroelectric switching speed has been experimentally obfuscated by the interaction between the measurement circuit and the ferroelectric switching itself. This has prohibited the observation of real material responses at nanosecond timescales and lower. Here, fundamental polarization switching speeds in ferroelectric materials with the perovskite, fluorite, and wurtzite structures are reported. Upon lateral scaling of island capacitors from micron to nanoscales, a clear transition from circuit-limited switching to a material-limited switching regime is observed. In La$_{0.15}$Bi$_{0.85}$FeO$_{3}$ capacitors, switching is as fast as ~150 ps, the fastest switching time reported. For polycrystalline Hf$_{0.5}$Zr$_{0.5}$O$_{2}$ capacitors, a fundamental switching limit of ~210 ps is observed. Switching times for Al$_{0.92}$B$_{0.08}$N are near 20 ns, limited by the coercive and breakdown electric fields. The activation field, instantaneous pseudo-resistivity, and energy-delay are reported in this material-limited regime. Lastly, a criterion for reaching the material-limited regime is provided. This regime enables observation of intrinsic material properties and favorable scaling trends for high-performance computing. |
| title | Material-Limited Switching in Nanoscale Ferroelectrics |
| topic | Materials Science Applied Physics |
| url | https://arxiv.org/abs/2507.12353 |