Enhancement of Indistinguishable Photon Emission from a GaAs Quantum Dot via Charge Noise Suppression

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Main Authors: Mudi, Priyabrata, Barua, Avijit, Gaur, Kartik, Wilksen, Steffen, Steinhoff, Alexander, Wijitpatima, Setthanat, Tripathi, Sarthak, Ritzmann, Julian, Wieck, Andreas D., Rodt, Sven, Gies, Christopher, Ludwig, Arne, Reitzenstein, Stephan
Format: Preprint
Published: 2025
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author Mudi, Priyabrata
Barua, Avijit
Gaur, Kartik
Wilksen, Steffen
Steinhoff, Alexander
Wijitpatima, Setthanat
Tripathi, Sarthak
Ritzmann, Julian
Wieck, Andreas D.
Rodt, Sven
Gies, Christopher
Ludwig, Arne
Reitzenstein, Stephan
author_facet Mudi, Priyabrata
Barua, Avijit
Gaur, Kartik
Wilksen, Steffen
Steinhoff, Alexander
Wijitpatima, Setthanat
Tripathi, Sarthak
Ritzmann, Julian
Wieck, Andreas D.
Rodt, Sven
Gies, Christopher
Ludwig, Arne
Reitzenstein, Stephan
contents The generation of indistinguishable single photons is a fundamental requirement for future quantum technologies, particularly in quantum repeater networks and for distributed quantum computing based on entanglement distribution. However, spectral jitter, often induced by charge noise in epitaxial quantum dots, leads to exciton dephasing, thereby limiting their practical usage in quantum applications. We present a straightforward approach to mitigate charge noise-induced decoherence in droplet-etched GaAs quantum dots embedded in an n-i-p diode structure and integrated deterministically into an electrically contacted circular Bragg grating resonator for emission enhancement. The quantum device allows for the stabilization of the charge environment by applying an external electrical field while producing a photon extraction efficiency of approximately (37 +- 2)%. Hong-Ou-Mandel two-photon interference measurements reveal a strong voltage dependence of the exciton dephasing time and interference visibility on the applied bias in excellent agreement with our theoretical predictions. Notably, the reduction in visibility from a maximum, charge-stabilized corrected value of 97 percent at the optimum bias point follows an inverse square dependence (proportional to 1/I^2) with increasing diode current (I) in forward direction. Under a quasi-resonant excitation scheme, we achieve a maximum exciton dephasing time (T2*) of approximately (6.8 +-0.5) ns, reaching nearly the Fourier limit (T2 = 2T1) without the need for complex echo schemes like Ramsey or Carr-Purcell-Meiboom-Gill sequences. These findings are consistent with theoretical predictions from rate equation modeling and quantum optical analysis as well as voltage-dependent linewidth measurements, demonstrating optimized electrical control of exciton dephasing.
format Preprint
id arxiv_https___arxiv_org_abs_2507_12641
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle Enhancement of Indistinguishable Photon Emission from a GaAs Quantum Dot via Charge Noise Suppression
Mudi, Priyabrata
Barua, Avijit
Gaur, Kartik
Wilksen, Steffen
Steinhoff, Alexander
Wijitpatima, Setthanat
Tripathi, Sarthak
Ritzmann, Julian
Wieck, Andreas D.
Rodt, Sven
Gies, Christopher
Ludwig, Arne
Reitzenstein, Stephan
Mesoscale and Nanoscale Physics
The generation of indistinguishable single photons is a fundamental requirement for future quantum technologies, particularly in quantum repeater networks and for distributed quantum computing based on entanglement distribution. However, spectral jitter, often induced by charge noise in epitaxial quantum dots, leads to exciton dephasing, thereby limiting their practical usage in quantum applications. We present a straightforward approach to mitigate charge noise-induced decoherence in droplet-etched GaAs quantum dots embedded in an n-i-p diode structure and integrated deterministically into an electrically contacted circular Bragg grating resonator for emission enhancement. The quantum device allows for the stabilization of the charge environment by applying an external electrical field while producing a photon extraction efficiency of approximately (37 +- 2)%. Hong-Ou-Mandel two-photon interference measurements reveal a strong voltage dependence of the exciton dephasing time and interference visibility on the applied bias in excellent agreement with our theoretical predictions. Notably, the reduction in visibility from a maximum, charge-stabilized corrected value of 97 percent at the optimum bias point follows an inverse square dependence (proportional to 1/I^2) with increasing diode current (I) in forward direction. Under a quasi-resonant excitation scheme, we achieve a maximum exciton dephasing time (T2*) of approximately (6.8 +-0.5) ns, reaching nearly the Fourier limit (T2 = 2T1) without the need for complex echo schemes like Ramsey or Carr-Purcell-Meiboom-Gill sequences. These findings are consistent with theoretical predictions from rate equation modeling and quantum optical analysis as well as voltage-dependent linewidth measurements, demonstrating optimized electrical control of exciton dephasing.
title Enhancement of Indistinguishable Photon Emission from a GaAs Quantum Dot via Charge Noise Suppression
topic Mesoscale and Nanoscale Physics
url https://arxiv.org/abs/2507.12641