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Main Authors: Fang, Xiaoguo, Xue, Huanyi, Mao, Xuhui, Chen, Feilin, Qin, Ludi, Pei, Haiyue, Chen, Zhong, Chen, Pingping, Zhao, Ding, An, Zhenghua, Qiu, Min
Format: Preprint
Published: 2025
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Online Access:https://arxiv.org/abs/2507.12794
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author Fang, Xiaoguo
Xue, Huanyi
Mao, Xuhui
Chen, Feilin
Qin, Ludi
Pei, Haiyue
Chen, Zhong
Chen, Pingping
Zhao, Ding
An, Zhenghua
Qiu, Min
author_facet Fang, Xiaoguo
Xue, Huanyi
Mao, Xuhui
Chen, Feilin
Qin, Ludi
Pei, Haiyue
Chen, Zhong
Chen, Pingping
Zhao, Ding
An, Zhenghua
Qiu, Min
contents Bipolar photoresponse - where photocurrent polarity reverses with excitation wavelength, gate voltage, or other conditions - is essential for optical logic, neuromorphic computing, and imaging. Unlike unipolar responses, bipolar behavior enables direct binary encoding and enhanced photodetection contrast. However, in conventional photoconductive or photovoltaic systems, the simultaneous and opposite-directional transport of electrons and holes often suppresses polarity switching. Recent self-powered Shockley-Ramo (SR) photoresponse in gapless materials also show only unipolar signals due to strong, irreversible electron-hole asymmetry. Here, we demonstrate for the first-time bipolar SR photoresponse in GaAs nanoconstriction devices by exploiting reversible electron-hole asymmetry. The longer carrier lifetimes in GaAs enable sub-diffusion-length control of carrier dynamics through geometry. By tuning photocarrier dynamics near the nanoconstriction for both majority electrons and minority holes, we modulate the SR response to exhibit dual polarities. At low excitation, photoelectrons dominate; as excitation increases, intervalley scattering populates higher-energy L-valleys, reducing electron contribution and leading to polarity reversal driven by the growing dominance of photoexcited holes. These results, supported by SR theory, show that nanoscale geometric engineering, together with the reversible electron-hole asymmetry, enables self-powered bipolar photocurrent responses, offering new routes toward advanced optoelectronic devices.
format Preprint
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institution arXiv
publishDate 2025
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spellingShingle Geometrical Tailoring of Shockley-Ramo Bipolar Photocurrent in Self-powered GaAs Nanodevices
Fang, Xiaoguo
Xue, Huanyi
Mao, Xuhui
Chen, Feilin
Qin, Ludi
Pei, Haiyue
Chen, Zhong
Chen, Pingping
Zhao, Ding
An, Zhenghua
Qiu, Min
Optics
Bipolar photoresponse - where photocurrent polarity reverses with excitation wavelength, gate voltage, or other conditions - is essential for optical logic, neuromorphic computing, and imaging. Unlike unipolar responses, bipolar behavior enables direct binary encoding and enhanced photodetection contrast. However, in conventional photoconductive or photovoltaic systems, the simultaneous and opposite-directional transport of electrons and holes often suppresses polarity switching. Recent self-powered Shockley-Ramo (SR) photoresponse in gapless materials also show only unipolar signals due to strong, irreversible electron-hole asymmetry. Here, we demonstrate for the first-time bipolar SR photoresponse in GaAs nanoconstriction devices by exploiting reversible electron-hole asymmetry. The longer carrier lifetimes in GaAs enable sub-diffusion-length control of carrier dynamics through geometry. By tuning photocarrier dynamics near the nanoconstriction for both majority electrons and minority holes, we modulate the SR response to exhibit dual polarities. At low excitation, photoelectrons dominate; as excitation increases, intervalley scattering populates higher-energy L-valleys, reducing electron contribution and leading to polarity reversal driven by the growing dominance of photoexcited holes. These results, supported by SR theory, show that nanoscale geometric engineering, together with the reversible electron-hole asymmetry, enables self-powered bipolar photocurrent responses, offering new routes toward advanced optoelectronic devices.
title Geometrical Tailoring of Shockley-Ramo Bipolar Photocurrent in Self-powered GaAs Nanodevices
topic Optics
url https://arxiv.org/abs/2507.12794