Chemical vapor deposition synthesis of (GeTe)n(Sb2Te3) gradient crystalline films as promising planar heterostructures
Fuente:
arXiv
Guardado en:
| Autores principales: | , , , , , |
|---|---|
| Formato: | Preprint |
| Publicado: |
2025
|
| Materias: | |
| Acceso en línea: | |
| Etiquetas: |
Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
|
| _version_ | 1866916848310681600 |
|---|---|
| author | Zhezhu, M. Vasil'ev, A. Yapryntsev, M. Ghalumyan, E. Ghazaryan, D. A. Gharagulyan, H. |
| author_facet | Zhezhu, M. Vasil'ev, A. Yapryntsev, M. Ghalumyan, E. Ghazaryan, D. A. Gharagulyan, H. |
| contents | Phase-change materials of the (GeTe)n (Sb2Te3) (GST) system are of high relevance in memory storage and energy conversion applications due to their fast-switching speed, high data retention, and tunable properties. Here, we report on a fast and efficient CVD-based method for the fabrication of crystalline GST films with variable Ge/Sb atomic content. In particular, the approach enables compositional control without changing the precursor, facilitating a gradient synthesis of Ge3Sb2Te6, Ge2Sb2Te5, and GeSb2Te4 phases in a single attempt. The analyses of their structural, optical, and electrical aspects highlight how compositional variation influences the film's properties. Our findings demonstrate a straightforward approach enabling the preparation of gradient crystalline GST films with tunable morphology and functionality. These gradient films can potentially provide in-plane multilevel and gradual switching thresholds for memory applications and altered refractive index and absorption for optical modulation and filtering applications. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2507_12888 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Chemical vapor deposition synthesis of (GeTe)n(Sb2Te3) gradient crystalline films as promising planar heterostructures Zhezhu, M. Vasil'ev, A. Yapryntsev, M. Ghalumyan, E. Ghazaryan, D. A. Gharagulyan, H. Materials Science Phase-change materials of the (GeTe)n (Sb2Te3) (GST) system are of high relevance in memory storage and energy conversion applications due to their fast-switching speed, high data retention, and tunable properties. Here, we report on a fast and efficient CVD-based method for the fabrication of crystalline GST films with variable Ge/Sb atomic content. In particular, the approach enables compositional control without changing the precursor, facilitating a gradient synthesis of Ge3Sb2Te6, Ge2Sb2Te5, and GeSb2Te4 phases in a single attempt. The analyses of their structural, optical, and electrical aspects highlight how compositional variation influences the film's properties. Our findings demonstrate a straightforward approach enabling the preparation of gradient crystalline GST films with tunable morphology and functionality. These gradient films can potentially provide in-plane multilevel and gradual switching thresholds for memory applications and altered refractive index and absorption for optical modulation and filtering applications. |
| title | Chemical vapor deposition synthesis of (GeTe)n(Sb2Te3) gradient crystalline films as promising planar heterostructures |
| topic | Materials Science |
| url | https://arxiv.org/abs/2507.12888 |